NCV7349D10R2G

NCV7349
www.onsemi.com
7
ELECTRICAL CHARACTERISTICS
Table 6. CHARACTERISTICS (V
CC
= 4.75 V to 5.25 V; V
IO
= 2.8 V to 5.5 V (NCV7349−3 only); T
J
= −40 to +150°C; R
LT
= 60 W
unless specified otherwise. On chip versions without V
IO
pin, reference voltage for all digital inputs and outputs is V
CC
instead of V
IO
.)
Symbol
Parameter Conditions Min Typ Max Unit
SUPPLY (Pin V
CC
)
I
CC
Supply current Dominant; V
TxD
= 0 V
Recessive; V
TxD
= V
IO
48
6
75
10
mA
I
CCS
Supply current in standby mode T
J
100°C, (Note 9) 10 15
mA
V
UVDVCC
Undervoltage detection voltage on V
CC
pin
2 3 4 V
SUPPLY (pin V
IO
) on NCV7349−3 Version Only
V
IO
Supply voltage on pin V
IO
2.8 5.5 V
I
IOS
Supply current on pin V
IO
in standby
mode
Standby mode 1
mA
I
IONM
Supply current on pin V
IO
in normal
mode
Dominant; V
TxD
= 0 V
Recessive; V
TxD
= V
IO
For V
IO
V
CC
1
0.2
mA
V
UVDVIO
Undervoltage detection voltage on V
IO
pin
1.3 2.7 V
TRANSMITTER DATA INPUT (Pin TxD)
V
IH
High−level input voltage Output recessive 2.0 V
IO
V
V
IL
Low−level input voltage Output dominant −0.3 +0.8 V
I
IH
High−level input current V
TxD
= V
IO
−5 0 +5
mA
I
IL
Low−level input current V
TxD
= 0 V −350 −200
mA
C
i
Input capacitance (Note 9) 5 10 pF
TRANSMITTER MODE SELECT (Pin STB)
V
IH
High−level input voltage Standby mode 2.0 V
IO
V
V
IL
Low−level input voltage Normal mode −0.3 +0.8 V
I
IH
High−level input current V
STB
= V
IO
−5 0 +5
mA
I
IL0
Low−level input current, NCV7349−0 V
STB
= 0 V −10 −4 −1
mA
I
IL3
Low−level input current, NCV7349−3 V
STB
= 0 V −40 −20 −4
mA
C
i
Input capacitance (Note 9) 5 10 pF
RECEIVER DATA OUTPUT (Pin RxD)
I
OH
High−level output current Normal mode, V
RxD
= V
IO
0.4 V
−1 −0.4 −0.1 mA
I
OL
Low−level output current V
RxD
= 0.4 V 1.6 6 12 mA
V
OH
High−level output voltage,
Weaker RxD pin in Standby mode is on
NCV7349−0 version only
Standby mode, I
RxD
= −100 mA
V
CC
− 1.1 V
CC
− 0.7 V
CC
− 0.4 V
BUS LINES (Pins CANH and CANL)
V
o(reces)
(norm)
Recessive bus voltage on pins CANH
and CANL
V
TxD
= V
IO
; no load;
normal mode
2.0 2.5 3.0 V
V
o(reces)
(stby)
Recessive bus voltage on pins CANH
and CANL
V
TxD
= V
IO
; no load;
standby mode
−100 0 100 mV
I
o(reces)
(CANH)
Recessive output current at pin CANH −35 V < V
CANH
< +35 V;
0 V < V
CC
< 5.25 V
−2.5 +2.5 mA
I
o(reces)
(CANL)
Recessive output current at pin CANL −35 V < V
CANL
< +35 V;
0 V < V
CC
< 5.25 V
−2.5 +2.5 mA
9. Values based on design and characterization, not tested in production
NCV7349
www.onsemi.com
8
Table 6. CHARACTERISTICS (V
CC
= 4.75 V to 5.25 V; V
IO
= 2.8 V to 5.5 V (NCV7349−3 only); T
J
= −40 to +150°C; R
LT
= 60 W
unless specified otherwise. On chip versions without V
IO
pin, reference voltage for all digital inputs and outputs is V
CC
instead of V
IO
.)
Symbol UnitMaxTypMinConditionsParameter
BUS LINES (Pins CANH and CANL)
I
LI(CANH)
Input leakage current to pin CANH
0 W < R(V
CC
to GND) < 1 MW
V
CANL
= V
CANH
= 5 V
−10 0 10
mA
I
LI(CANL)
Input leakage current to pin CANL
0 W < R(V
CC
to GND) < 1 MW
V
CANL
= V
CANH
= 5 V
−10 0 10
mA
V
o(dom)
(CANH)
Dominant output voltage at pin CANH V
TxD
= 0 V 3.0 3.6 4.25 V
V
o(dom)
(CANL)
Dominant output voltage at pin CANL V
TxD
= 0 V 0.5 1.4 1.75 V
V
o(dif)
(bus_dom)
Differential bus output voltage
(V
CANH
− V
CANL
)
V
TxD
= 0 V; dominant;
45 W < R
LT
< 65 W
1.5 2.25 3.0 V
V
o(dif)
(bus_rec)
Differential bus output voltage
(V
CANH
− V
CANL
)
V
TxD
= V
IO
; recessive; no load −120 0 +50 mV
I
o(sc)
(CANH)
Short circuit output current at pin CANH V
CANH
= 0 V; V
TxD
= 0 V −100 −70 −45 mA
I
o(sc)
(CANL)
Short circuit output current at pin CANL V
CANL
= 36 V; V
TxD
= 0 V 45 70 100 mA
V
i(dif)R
(th)
Differential receiver threshold voltage –
Dominant to Recessive (see Figure 6)
−2 V < V
CANL
< +7 V;
−2 V < V
CANH
< +7 V
0.5 0.6 0.7 V
V
i(dif)D
(th)
Differential receiver threshold voltage –
Recessive to Dominant (see Figure 6)
−2 V < V
CANL
< +7 V;
−2 V < V
CANH
< +7 V
0.7 0.8 0.9 V
V
ihcmR(dif)
(th)
Differential receiver threshold voltage –
Dominant to Recessive (see Figure 6)
−35 V < V
CANL
< +35 V;
−35 V < V
CANH
< +35 V
0.4 0.8 V
V
ihcmD(dif)
(th)
Differential receiver threshold voltage –
Recessive to Dominant (see Figure 6)
−35 V < V
CANL
< +35 V;
−35 V < V
CANH
< +35 V
0.6 1 V
V
ihcmD12(dif)
(th)
Differential receiver threshold voltage –
Both transitions (see Figure 6)
−12 V < V
CANL
< +12 V;
−12 V < V
CANH
< +12 V
0.5 0.9 V
V
i(dif)
(hys)
Differential receiver input voltage hys-
teresis
−2 V < V
CANL
< +7 V;
−2 V < V
CANH
< +7 V
100 200 300 mV
V
i(dif)
(th)_STDBY
Differential receiver threshold voltage
in standby mode
−12 V < V
CANL
< +12 V;
−12 V < V
CANH
< +12 V
0.4 0.8 1.15 V
R
i(cm)
(CANH)
Common−mode input resistance at pin
CANH
15 26 37
kW
R
i(cm)
(CANL)
Common−mode input resistance at pin
CANL
15 26 37
kW
R
i(cm)
(m)
Matching between pin CANH and pin
CANL common mode input resistance
V
CANH
= V
CANL
−3 0 +3 %
R
i(dif)
Differential input resistance 25 50 75
kW
C
i(CANH)
Input capacitance at pin CANH V
TxD
= V
IO
; (Note 9) 30 pF
C
i(CANL)
Input capacitance at pin CANL V
TxD
= V
IO
; (Note 9) 30 pF
C
i(dif)
Differential input capacitance V
TxD
= V
IO
; (Note 9) 3.75 10 pF
THERMAL SHUTDOWN
T
J(sd)
Shutdown junction temperature Junction temperature rising 150 170 185 °C
TIMING CHARACTERISTICS (see Figure 5 and Figure 8)
t
d(TxD−BUSon)
Delay TxD to bus active C
i
= 100 pF between CANH to
CANL
50 ns
t
d(TxD−BUSoff)
Delay TxD to bus inactive C
i
= 100 pF between CANH to
CANL
60 ns
t
d(BUSon−RxD)
Delay bus active to RxD C
RxD
= 15 pF 60 ns
t
d(BUSoff−RxD)
Delay bus inactive to RxD C
RxD
= 15 pF 60 ns
9. Values based on design and characterization, not tested in production
NCV7349
www.onsemi.com
9
Table 6. CHARACTERISTICS (V
CC
= 4.75 V to 5.25 V; V
IO
= 2.8 V to 5.5 V (NCV7349−3 only); T
J
= −40 to +150°C; R
LT
= 60 W
unless specified otherwise. On chip versions without V
IO
pin, reference voltage for all digital inputs and outputs is V
CC
instead of V
IO
.)
Symbol UnitMaxTypMinConditionsParameter
TIMING CHARACTERISTICS (see Figure 5 and Figure 8)
t
pd
Propagation delay TxD to RxD
(NCV7349−0 version)
C
i
= 100 pF between CANH to
CANL
125 245 ns
Propagation delay TxD to RxD
(NCV7349−3 version)
C
i
= 100 pF between CANH to
CANL
130 250 ns
t
d(stb−nm)
Delay standby mode to normal mode 5 8 20
ms
t
wake
Dominant time for wake−up via bus 0.5 2.5 5
ms
t
dwakerd
Delay to flag wake event (recessive to
dominant transitions) (See Figure 4)
Valid bus wake−up event,
C
RxD
= 15 pF
1 4.5 10
ms
t
dwakedr
Delay to flag wake event (dominant to
recessive transitions) (See Figure 4)
Valid bus wake−up event,
C
RxD
= 15 pF
0.5 3.3 7
ms
t
wake(RxD)
Minimum pulse width on RxD
(See Figure 4)
5 ms t
WAKE
, C
RxD
= 15 pF
0.5
ms
t
dom(TxD)
TxD dominant time for time−out V
TxD
= 0 V 1.2 2.6 4 ms
9. Values based on design and characterization, not tested in production
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MEASUREMENT SETUPS AND DEFINITIONS
dominant
0.9 V
0.5 V
recessive
50%
recessive
50%
TxD
CANH
CANL
RxD
Figure 5. Transceiver Timing Diagram
t
pd
0.7 x V
CC
(*)
t
d(BUSoff−RXD)
0.3 x V
CC
(*)
t
pd
t
d(BUSon−RXD)
t
d(TxD−BUSoff)
t
d(TxD−BUSon)
V
i(dif)
=
V
CANH
− V
CANL
*On NCV7349−3 V
CC
is replaced by V
IO

NCV7349D10R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
CAN Interface IC High Spd Lo Pwr CAN Transceiver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet