ELECTRICAL CHARACTERISTICS 1: N rank (TA = −40 to +100°C, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.
*1
MAX. Unit
Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.6 1.8 V
Reverse Current IR VR = 3 V, TA = 25°C 10
μ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz, TA = 25°C 30 pF
Detector High Level Output Current IOH VCC = VO = 3.3 V, VF = 0.8 V 1 100
μ
A
Low Level Output Voltage
*2
VOL VCC = 3.3 V, IF = 5 mA, IOL = 10 mA 0.2 0.6 V
High Level Supply Current ICCH VCC = 3.3 V, IF = 0 mA, VO = Open 2 mA
Low Level Supply Current ICCL VCC = 3.3 V, IF = 10 mA, VO = Open 3
Coupled Threshold Input Current
(H → L)
IFHL VCC = 3.3 V, VO = 0.8 V, RL = 350 Ω 2 5 mA
Isolation Resistance RI-O VI-O = 1 kVDC, RH = 40 to 60%,
T
A = 25°C
10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz, TA = 25°C 0.6 pF
Propagation Delay Time
(H → L)
*3
t
PHL VCC = 3.3 V, RL = 350 Ω, IF = 7.5 mA,
V
THHL = VTHLH = 1.5 V
500 ns
Propagation Delay Time
(L → H)
*3
t
PLH 700
Rise Time tr
60
ns
Fall Time tf
70
Pulse Width Distortion
(PWD)
*3
⏐t
PHL-tPLH⏐ 200 ns
Common Mode
Transient Immunity at High
Level Output
*4
CM
H VCC = 3.3 V, RL = 350 Ω, TA = 25°C,
I
F = 0 mA, VO > 2.0 V, VCM = 1.0 kV
15 20
Common Mode
Transient Immunity at Low
Level Output
*4
CM
L VCC = 3.3 V, RL = 350 Ω, TA = 25°C,
I
F = 7.5 mA, VO < 0.8 V, VCM = 1.0 kV
15 20
kV/
μ
s
Data Sheet PN10697EJ02V0DS
5
PS9122
