ZX5T955Z.
Issue 2 - June 2008 4 www.zetex.com
© Zetex Semiconductors Ltd 2008
Electrical Characteristics (at T
amb
=25
o
C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage
BV
CBO
-180 -200 V I
C
= -100A
Collector-Emitter breakdown
voltage
BV
CER
-180 -200 V I
C
= -100A, RB<1k⍀
Collector-Emitter breakdown
voltage
BV
CEO
-140 -160 V
I
C
= -10mA
(*)
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
Emitter-Base breakdown
voltage
BV
EBO
-7.0 -8.0 V I
E
= -100A
Collector cut-off current I
CBO
<1 -20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, Tamb =100
o
C
Collector cut-off current I
CER
R<1k⍀
<1 -20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, Tamb =100
o
C
Emitter cut-off current I
EBO
<1 -10 nA V
EB
= -6V
Collector-Emitter saturation
voltage
V
CE(sat)
-37 -60 mV
I
C
= -0.1A, I
B
= -5mA
(*)
-50 -75 mV
I
C
= -0.5A, I
B
= -50mA
(*)
-80 -115 mV
I
C
= -1A, I
B
= -100mA
(*)
-255 -330 mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-910 -1010 mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter turn-on voltage V
BE(on)
-800 -900 mV
I
C
= -3A, V
CE
= -5V
(*)
Static forward current
transfer ratio
h
FE
100 225
I
C
= -10mA, V
CE
= -5V
(*)
100 200 300
I
C
= -1A, V
CE
= -5V
(*)
45 100
I
C
= -3A, V
CE
= -5V
(*)
5
I
C
= -10A, V
CE
= -5V
(*)
Transition frequency f
T
120 MHz I
C
= -100mA, V
CE
= -10V
f
= 50MHz
Output capacitance C
OBO
33 pF
V
CB
= -10V, f
= 1MHz
(*)
Switching times t
on
42 ns I
C
= -1A, V
CC
= -50V,
t
off
636 ns I
B1
= -I
B2
= -100mA
