NXP Semiconductors
PMEG045V050EPD
45 V, 5 A low VF MEGA Schottky barrier rectifier
PMEG045V050EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 January 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 5 mA; T
j
= 25 °C; t
p
≤ 1.2 ms;
δ ≤ 0.12; pulsed
45 - - V
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
- 340 390 mV
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
- 370 - mV
I
F
= 5 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
- 425 490 mV
V
F
forward voltage
I
F
= 5 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C; pulsed
- 340 - mV
V
R
= 5 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C;
pulsed
- 7 - µA
V
R
= 10 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
- 10 30 µA
V
R
= 30 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
- 30 - µA
I
R
reverse current
V
R
= 45 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
- 120 300 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 580 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 190 - pF
t
rr
reverse recovery time
step recovery
I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 19 - ns
t
rr
reverse recovery time
ramp recovery
dI
F
/dt = 200 A/µs; T
j
= 25 °C; I
F
= 6 A;
V
R
= 26 V
- 12 - ns
V
FRM
peak forward recovery
voltage
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C - 331 - mV
NXP Semiconductors
PMEG045V050EPD
45 V, 5 A low VF MEGA Schottky barrier rectifier
PMEG045V050EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 January 2015 7 / 15
pulsed condition
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 100 °C
(5) T
j
= 85 °C
(6) T
j
= 25 °C
(7) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 100 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
T
j
= 100 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors
PMEG045V050EPD
45 V, 5 A low VF MEGA Schottky barrier rectifier
PMEG045V050EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 January 2015 8 / 15
T
j
= 100 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(5) δ = 0.2
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values

PMEG045V050EPDZ

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 45V 5A MEGA Schottky
Lifecycle:
New from this manufacturer.
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