ZXTP2012ZTA Datasheet ZXTP2012ZTA, ZXTP2012ZQTA | P4-P6

ZXTP2012Z

Da

tasheet Number: DS33713 Rev. 3 - 2

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ZXTP2012Z

A

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Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-100 -120 - V

I

C

= -100µA

Collector-Emitter Breakdown Voltage (Notes 9)

BV

CER

-100 -120 - V

I

C

= -1µA, R

B

≤ 1kΩ

Collector-Emitter Breakdown Voltage (Notes 9)

BV

CEO

-60 -80 - V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-7 -8.1 - V

I

E

= -100µA

Collector Cutoff Current

I

CBO

-

< -1

-20

-500

nA

V

CB

= -80V

V

CB

= -80V, T

A

= +100°C

Collector Cutoff Current

I

CER

R

≤1kΩ

-

< -1

-20

-500

nA

V

CB

= -80V

V

CB

= -80V, T

A

= +100°C

Emitter Cutoff Current

I

EBO

- < -1 -10 nA

V

EB

= -6V

DC current transfer Static ratio (Notes 9)

h

FE

100

45

10

250

200

90

25

300

I

C

= -10mA, V

CE

= -1V

I

C

= -2A, V

CE

= -1V

I

C

= -5A, V

CE

= -1V

I

C

= -10A, V

CE

= -1V

Collector-Emitter Saturation Voltage (Notes 9)

V

CE(sat)

-

-14

-50

-75

-160

-20

-65

-110

-215

mV

I

C

= -100mA, I

B

= -10mA

I

C

= -1A, I

B

= -100mA

I

C

= -2A, I

B

= -200mA

I

C

= -5A, I

B

= -500mA

Base-Emitter Saturation Voltage (Notes 9)

V

BE

(

sat

)

- -950 -1050 mV

I

C

= -5A, I

B

= -500mA

Base-Emitter Turn-on Voltage (Notes 9)

V

BE

(

on

)

- -840 -950 mV

I

C

= -5A, V

CE

= -1V

Transitional Frequency (Notes 9)

f

T

- 120 - MHz

I

C

= -100mA, V

CE

= -10V,

f

= 50MHz

Output capacitance

C

obo

- 48 - pF

V

CB

= -10V, f = 1MHz,

Switching Time

t

ON

-

39

- ns

V

CC

= -10V, I

C

= -1A,

I

B1

= I

B2

= -100mA

t

OFF

370

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

ZXTP2012Z

Da

tasheet Number: DS33713 Rev. 3 - 2

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A

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Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

1m 10m 100m 1 10

10m

100m

1

1m 10m 100m 1 10

0.0

0.1

0.2

0.3

0.4

0.5

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

300

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

- V

CE(SAT)

(V)

- I

C

Collector Current (A)

h

FE

v I

C

V

CE

=1V

-55°C

25°C

100°C

Normalised Gain

- I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

- V

BE(SAT)

(V)

- I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=1V

100°C

25°C

-55°C

- V

BE(ON)

(V)

- I

C

Collector Current (A)

Typical Gain (h

FE

)

ZXTP2012Z

Da

tasheet Number: DS33713 Rev. 3 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT89

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44

D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60

e 1.50 Typ

H 3.94 4.25

H1 2.63 2.93

L 0.89 1.20

All Dimensions in mm

Dimensions Value (in mm)

X 0.900

X1 1.733

X2 0.416

Y 1.300

Y1 4.600

Y2 1.475

Y3 0.950

Y4 1.125

C 1.500

Y1

X1

Y2

Y

C

X (3x)

Y3

Y4

X2 (2x)

E

H

D1

B1

B

e

C

L

A

D

8° (4X)

H

R

0

.

2

0

ZXTP2012ZTA

ZXTP2012ZTA

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