VS-40TPS16LHM3

VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
1
Document Number: 96134
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
AEC-Q101 qualified meets JESD 201 class 1A
whisker test
•Flexible solution for reliable AC power
rectification
Easy control peak current at charger power up
to reduce passive / electromechanical components
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
On-board and off-board EV / HEV battery chargers
Renewable energy inverters
DESCRIPTION
The VS-40TPS16LHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
PRIMARY CHARACTERISTICS
I
T(AV)
35 A
V
DRM
/V
RRM
1600 V
V
TM
1.45 V
I
GT
150 mA
T
J
-40 °C to +125 °C
Package TO-247AD 3L
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-247AD 3L
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 35
A
I
RMS
55
V
RRM
/V
DRM
1600 V
I
TSM
500 A
V
T
40 A, T
J
= 25 °C 1.45 V
dv/dt 1000 V/μs
di/dt 100 A/μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
/ V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/ I
DRM
AT 125 °C
mA
VS-40TPS16LHM3 1600 1700 10
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
2
Document Number: 96134
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch
I
T(RMS)
55
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial
T
J
= T
J
max.
420
10 ms sine pulse, no voltage reapplied 500
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 880
A
2
s
10 ms sine pulse, no voltage reapplied 1250
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A
2
s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
1.02
V
High level value of threshold voltage V
T(TO)2
1.23
Low level value of on-state slope resistance r
t1
9.74
m
High level value of on-state slope resistance r
t2
7.50
Maximum peak on-state voltage V
TM
110 A, T
J
= 25 °C 1.92
V
90 A, T
J
= 25 °C 1.82
Maximum rate of rise of turned-on current dI/dt T
J
= 25 °C 100 A/μs
Maximum holding current I
H
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C 300
mA
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 350
Maximum reverse and direct leakage current I
RRM/
I
DRM
T
J
= 25 °C
V
R
= rated V
RRM
/V
DRM
0.5
T
J
= 125 °C 10
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = open 1000 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10 V
Maximum required DC gate voltage to trigger V
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
4.0
VT
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum required DC gate current to trigger I
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
270
mAT
J
= 25 °C 150
T
J
= 125 °C 80
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= rated value
0.25 V
Maximum DC gate current not to trigger I
GD
6mA
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
3
Document Number: 96134
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-40 to +125 °C
Maximum thermal resistance, junction to case R
thJC
DC operation
0.6
°C/WMaximum thermal resistance, junction to ambient R
thJA
40
Maximum thermal resistance, case to heat sink R
thCS
Mounting surface, smooth, and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AD 3L 40TPS16LH
70
80
90
100
110
120
130
0 10 20 30 40
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction angle
Average On-State Current (A)
R (DC) = 0.6 °C/W
thJC
70
80
90
100
110
120
130
0 10 20 30 40 50 60
DC
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Conduction period
R (DC) = 0.6 °C/W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RMS limit
Conduction angle
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
180°
120°
90°
60°
30°
T = 125 °C
J
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
T = 125 °C
J

VS-40TPS16LHM3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCRs 35A If; 1600V Vr TO-247AD 3L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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