Product Standards
Transistors with Built-in Resistor
DRC2123E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
1.2 -R1/R2 0.8 1.0
V
R1 -30% 2.2 +30%
k
0.8Vi(off)
V
VCE(sat) IC = 10 mA, IB = 0.5 mA
Vi(on) VCE = 0.2 V, IC = 5 mA 1.8
0.3 V
2.0 mA
20 -hFE VCE = 10 V, IC = 5 mA 6
IEBO VEB = 6 V, IC = 0
ICEO VCE = 50 V, IB = 0
ICBO VCB = 50 V, IE = 0
VCEO IC = 2 mA, IB = 0 50 V
0.1 μA
0.5 μA
Resistance ratio
Input resistance
VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
Forward current transfer ratio
Input voltage
Collector-base cutoff current (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base cutoff current (Collector open)
Collector-emitter cutoff current (Base open)
Max Unit
Collector-base voltage (Emitter open)
VCBO 50 IC = 10 μA, IE = 0 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
200 mW
Junction temperature Tj 150 °C
Collector-emitter voltage (Base open) VCEO
Total power dissipation PT
Collector current IC 100 mA
3
Unit: mm
Min Typ
Internal Connection
Resistance
value
1of
R1 2.2
k
R2 2.2
k
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC2123E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2123E
Features
Packaging
Mini3-G3-B
JEITA SC-59A
3. Collector
Marking Symbol:
N2
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
TO-236AA/SOT-23
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
50 V
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
