FDB2670 Datasheet FDB2670, FDP2670 | P1-P3

November 2001

2001 Fairchild Semiconductor Corporation

FDP2670/FDB2670 Rev C1(W)

FDP2670/FDB2670

200V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically for switching on the primary side in the

isolated DC/DC converter application. Any application

requiring a 200V MOSFETs with low on-resistance and

fast switching will benefit.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS

(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 19 A, 200 V. R

DS(ON)

= 130 mΩ @ V

GS

= 10 V

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

S

G

D

TO-220

FDP Series

D

G

S

TO-263AB

FDB Series

S

G

D

Absolute Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 200 V

V

GSS

Gate-Source Voltage

± 20

V

I

D

Drain Current – Continuous (Note 1) 19 A

– Pulsed (Note 1) 40 A

P

D

Total Power Dissipation @ T

C

= 25°C

93 W

Derate above 25°C

0.63

W°/C

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns

T

J

, T

STG

Operating and Storage Junction Temperature Range –65 to +175

°C

Thermal Characteristics

R

θJC

Thermal Resistance, Junction-to-Case 1.6

°C/W

R

θJA

Thermal Resistance, Junction-to-Ambient 62.5

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB2670 FDB2670 13’’ 24mm 800 units

FDP2670 FDP2670 Tube n/a 45 units

FDP2670

/

FDB2670

FDP2670/FDB2670 Rev C1(W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W

DSS

Single Pulse Drain-Source

Avalanche Energy

V

DD

= 100 V, I

D

= 10 A

375

mJ

I

AR

Maximum Drain-Source Avalanche

Current

10 A

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

200 V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 µA, Referenced to 25°C

241

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 160 V, V

GS

= 0 V 1

µA

I

GSSF

Gate–Body Leakage, Forward V

GS

= 20 V, V

DS

= 0 V 100 nA

I

GSSR

Gate–Body Leakage, Reverse V

GS

= –20 V V

DS

= 0 V –100 nA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

244.5V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C

–9

mV/°C

R

DS(on)

Static Drain–Source

On–Resistance

V

GS

= 10 V, I

D

= 10 A

V

GS

= 10V, I

D

= 10 A, T

J

= 125°C

98

205

130

285

mΩ

I

D(on)

On–State Drain Current V

GS

= 10 V, V

DS

= 10 V 20 A

g

FS

Forward Transconductance V

DS

= 10 V, I

D

= 10 A 24 S

Dynamic Characteristics

C

iss

Input Capacitance 1320 pF

C

oss

Output Capacitance 71 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 100 V, V

GS

= 0 V,

f = 1.0 MHz

24 pF

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time 14 25 ns

t

r

Turn–On Rise Time 5 10 ns

t

d(off)

Turn–Off Delay Time 26 41 ns

t

f

Turn–Off Fall Time

V

DD

= 100 V, I

D

= 1 A,

V

GS

= 10 V, R

GEN

= 6 Ω

23 37 ns

Q

g

Total Gate Charge 27 38 nC

Q

gs

Gate–Source Charge 7 nC

Q

gd

Gate–Drain Charge

V

DS

= 100 V, I

D

= 10 A,

V

GS

= 10 V

10 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 19 A

V

SD

Drain–Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= 10 A (Note 2) 0.8 1.3 V

Notes:

1. Calculated continuous current based on maximum allowable junction temperature.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. I

SD

≤ 3A, di/dt ≤ 100A/µs, V

DD

≤ BV

DSS

, Starting T

J

= 25°C

FDP2670

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FDB2670

FDP2670/FDB2670 Rev C1(W)

Typical Characteristics

0

6

12

18

24

30

0 3 6 9 12 15

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A

)

7.0V

6.0V

V

GS

= 10V

6.5V

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

0 6 12 18 24 30

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 6V

6.5V

10V

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.6

1

1.4

1.8

2.2

2.6

-50 -25 0 25 50 75 100 125 150 175

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANC

E

I

D

=10A

V

GS

= 10V

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

5678910

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 5A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

3.5 4.5 5.5 6.5 7.5

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A

)

T

A

= 125

o

C

25

o

C

-55

o

C

V

DS

= 50V

0.0001

0.001

0.01

0.1

1

10

100

00.20.40.60.811.2

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A

)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP2670

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FDB2670

FDB2670

FDB2670

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