TK28N65W,S1F Datasheet TK28N65W,S1F | P1-P3

TK28N65W

1

MOSFETs Silicon N-Channel MOS (DTMOS)

TK28N65W

Start of commercial production

2013-09

1.

1. Applications

Applications

• Switching Voltage Regulators

2.

2. Features

Features

(1) Low drain-source on-resistance: R

DS(ON)

= 0.094 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: V

th

= 2.5 to 3.5 V (V

DS

= 10 V, I

D

= 1.6 mA)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

TO-247

1: Gate

2: Drain (Heatsink)

3: Source

2014-02-25

Rev.2.0

TK28N65W

2

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

Mounting torque

(T

c

= 25)

(Note 1)

(Note 2)

(Note 1)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

E

AS

I

AR

I

DR

I

DRP

T

ch

T

stg

TOR

Rating

650

±30

27.6

110

230

444

7

27.6

110

150

-55 to 150

0.8

Unit

V

A

W

mJ

A



Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Symbol

R

th(ch-c)

R

th(ch-a)

Max

0.543

50

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: V

DD

= 90 V, T

ch

= 25 (initial), L = 16 mH, R

G

= 25 Ω, I

AR

= 7 A

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2014-02-25

Rev.2.0

TK28N65W

3

6.

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Symbol

I

GSS

I

DSS

V

(BR)DSS

V

th

R

DS(ON)

Test Condition

V

GS

= ±30 V, V

DS

= 0 V

V

DS

= 650 V, V

GS

= 0 V

I

D

= 10 mA, V

GS

= 0 V

V

DS

= 10 V, I

D

= 1.6 mA

V

GS

= 10 V, I

D

= 13.8 A

Min



650

2.5



Typ.



0.094

Max

±1

10



3.5

0.11

Unit

µA

V

Ω

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Effective output capacitance

Gate resistance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

MOSFET dv/dt ruggedness

Symbol

C

iss

C

rss

C

oss

C

o(er)

r

g

t

r

t

on

t

f

t

off

dv/dt

Test Condition

V

DS

= 300 V, V

GS

= 0 V, f = 100 kHz

V

DS

= 0 to 400 V, V

GS

= 0 V

V

DS

= OPEN, f = 1 MHz

See Figure 6.2.1

V

DD

= 0 to 400 V, I

D

= 13.8 A

Min



50

Typ.

3000

8

70

110

2

25

60

7

130



Max



Unit

pF

Ω

ns

V/ns

V

DD

≈ 400 V

V

GS

= 10 V/0 V

I

D

= 13.8 A

R

L

= 28 Ω

R

G

= 10 Ω

Duty ≤ 1 %, t

w

= 10 µs

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Q

g

Q

gs1

Q

gd

Test Condition

V

DD

≈ 400 V, V

GS

= 10 V, I

D

= 27.6 A

Min



Typ.

75

20

32

Max



Unit

nC

6.4.

6.4. Source-Drain Characteristics (T

Source-Drain Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Diode dv/dt ruggedness

Symbol

V

DSF

t

rr

Q

rr

I

rr

dv/dt

Test Condition

I

DR

= 27.6 A, V

GS

= 0 V

I

DR

= 13.8 A, V

GS

= 0 V

-dI

DR

/dt = 50 A/µs

I

DR

= 13.8 A, V

GS

= 0 V, V

DD

= 400 V

Min



15

Typ.



410

3.5

17



Max

-1.7



Unit

V

ns

µC

A

V/ns

2014-02-25

Rev.2.0

TK28N65W,S1F

TK28N65W,S1F

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