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BAS116E6433HTMA1

P1-P3P4-P6
2007-04-19
1
BAS116...
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAS116
!
Type Package Configuration Marking
BAS116 SOT23 single JVs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
250 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
I
FSM
4.5
0.5
A
Total power dissipation
T
S
≤ 54°C
P
tot
370 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
BAS116
R
thJS
≤ 260
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-19
2
BAS116...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85 - - V
Reverse current
V
R
= 75 V
V
R
= 75 V, T
A
= 150 °C
I
R
-
-
-
-
5
80
nA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
900
1000
1100
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- 2 - pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100 Ω
t
rr
- 0.6 1.5 µs
Test circuit for reverse recovery time
EHN00022
Oscillograph
Ι
F
D.U.T.
Puls generator: t
p
= 10µs, D = 0.05,
t
r
= 0.6ns, R
i
= 50Ω
Oscillograph: R = 50Ω , t
r
= 0.35ns, C ≤ 1pF
2007-04-19
3
BAS116...
Reverse current I
R
= ƒ (T
A
)
V
R
= Parameter
0 50 100 150
BAS 116 EHB00053
nA
˚C
max
typ
10
1
2
10
2
10
-1
10
-2
10
-3
10
Ι
R
A
T
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0
0.5
1.0
1.5
0 50 100 150
BAS 116 EHB00056
V
T
A
V
F
˚C
150 mA
50 mA
10 mA
1 mA
0.1 mA
Ι
F
=
Forward current I
F
= ƒ (V
F
)
T
A
= 25°C
0
0
EHB00054BAS 116
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Forward current I
F
= ƒ (T
S
)
BAS116
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
25
50
75
100
125
150
175
200
225
250
mA
300
I
F
P1-P3P4-P6

BAS116E6433HTMA1

Mfr. #:
Buy BAS116E6433HTMA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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