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VCUT0610AHD1-G3-08

P1-P3P4-P5
VCUT0610AHD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 29-Aug-17
1
Document Number: 85936
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Bidirectional Asymmetrical (BiAs) Single Line ESD Protection
Diode in LLP1006-2L
MARKING (example only)
Bar = pin 1 marking
Y = type code (see table below)
X = date code
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Ultra compact LLP1006-2L
• Low package height = 0.4 mm
• 1-line ESD protection
•
Working range -6 V up to +10 V or -10 V up to +6 V
• Low leakage current < 0.1 μA
• Low load capacitance typical C
D
= 5.4 pF at 0 V
• ESD immunity acc. IEC 61000-4-2
± 18 kV contact discharge
± 18 kV air discharge
• Tin plated exposed side wall of leadframe; soldering can
be checked by standard vision inspection;
(AOI = Automated Outgoing Inspection); no X-ray
necessary
•e3 - Sn
• PATENT(S): www.vishay.com/patents
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and international patents.
20855
20950
1
2
21121
XY
Available
Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VCUT0610AHD1 VCUT0610AHD1-G3-08 10 000 100 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VCUT0610AHD1 LLP1006-2L 6 0.72 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VCUT0610AHD1
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to pin 2
acc. IEC 61000-4-5, 8/20 μs/single shot; T
amb
= 25 °C
I
PPM
3.2 A
Pin 2 to pin 1
acc. IEC 61000-4-5, 8/20 μs/single shot; T
amb
= 25 °C
2.3 A
Peak pulse power
Pin 1 to pin 2
acc. IEC 61000-4-5, 8/20 μs/single shot; T
amb
= 25 °C
P
PP
54 W
Pin 2 to pin 1
acc. IEC 61000-4-5, 8/20 μs/single shot; T
amb
= 25 °C
64 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses; T
amb
= 25 °C
V
ESD
± 18 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 18 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
STG
-55 to +125 °C
VCUT0610AHD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 29-Aug-17
2
Document Number: 85936
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT0610AHD1
The VCUT0610AHD1 is a bidirectional but asymmetrical (BiAs) ESD protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0610AHD1 offers a high
isolation (low leakage current, small capacitance) within the specified working range of -6 V to +10 V or -10 V and +6 V. Due to
the short leads and small package size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients
like an ESD strike can be clamped with minimal over- or undershoots.
ELECTRICAL CHARACTERISTICS VCUT0610AHD1 (T
amb
= 25 C°, unless otherwise specified)
Measured from pin 2 to pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--10V
Reverse voltage At I
R
= 0.1 μA V
R
10 - - V
Reverse current At V = 10 V I
R
--0.1μA
Reverse breakdown voltage At I = 1 mA V
BR
12 - - V
Reverse clamping voltage
At I
PP
= 1 A; t
p
= 8/20 μs
V
C
-1923V
At I
PP
= I
PPM
= 2.3 A; t
p
= 8/20 μs - 24 28 V
Capacitance
At V = 0 V; f = 1 MHz
C
D
-5.46.5pF
At V = 3.3 V; f = 1 MHz - 3.4 - pF
ELECTRICAL CHARACTERISTICS VCUT0610AHD1 (T
amb
= 25 C°, unless otherwise specified)
Measured from pin 1 to pin 2
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--6V
Reverse voltage At I
R
= 0.1 μA V
R
6--V
Reverse current At V = 6 V I
R
--0.1μA
Reverse breakdown voltage At I = 1 mA V
BR
6.5 - - V
Reverse clamping voltage
At I
PP
= 1 A; t
p
= 8/20 μs
V
C
- 10.3 12 V
At I
PP
= I
PPM
= 3.2 A; t
p
= 8/20 μs - 13.8 17 V
Capacitance
At V = 0 V; f = 1 MHz
C
D
-5.46.5pF
At V = 3.3 V; f = 1 MHz - 4 - pF
1
2
Ground
1
2
Ground
- 6 V ≤ V
RW
≤ + 10 V - 10 V ≤ V
RW
≤ + 6 V
22287
VCUT0610AHD1
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 29-Aug-17
3
Document Number: 85936
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance vs. Reverse Voltage
Fig. 4 - Typical Forward and Reverse Voltage vs. Reverse Current
Fig. 5 - Typical Clamping Voltage vs. Peak Pulse Current
Fig. 6 - Typical Peak Clamping Voltage vs. Peak Pulse Current
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
I
ESD
(%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
I
PPM
(%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548
22898
0
1
2
3
4
5
6
0510
2nd line
C
D
(pF)
V
R
(V)
2nd line
f = 1 MHz
Pin 1 to 2
Pin 2 to 1
22901
0
2
4
6
8
10
12
14
16
18
0.01 0.1 1 10 100 1000 10 000
2nd line
V
R
(V)
I
R
(µA)
2nd line
Pin 1 to 2
Pin 2 to 1
2nd line
22900
10
100
1000
10000
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20
Axis Title
1st line
2nd line
2nd line
V
C-
TLP
(V)
I
TLP
(A)
2nd line
Transmission line pulse (TLP):
t
p
= 100 ns
Pin 1 to 2
Pin 2 to 2
22899
0
5
10
15
20
25
30
01234
2nd line
V
C
(V)
I
PP
(A)
2nd line
Measured according IEC 61000-4-5
(8/20 µs - wave form)
Pin 1-2
Pin 2-1
P1-P3P4-P5

VCUT0610AHD1-G3-08

Mfr. #:
Buy VCUT0610AHD1-G3-08
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors BiAs Single Line ESD LLP1006-2L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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