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TFDU5307-TT1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
TFDU5307
Document Number 82616
Rev. 1.6, 02-Mar-07
Vishay Semiconductors
www.vishay.com
245
Eye safety information
*)
Due to the internal limitation measures the device is a "class 1" device.
**)
IrDA specifies the max. intensity with 500 mW/sr.
Electrical Characteristics
Transceiver
T
amb
= 25 °C, V
CC1
= V
CC2
= 2.7 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
*)
Standard illuminant A
**)
The typical threshold level is 0.5 x V
logic
. It is recommended to use the specified min/max values to avoid increased operating current.
The inputs in low state are actively loaded for noise protection. See for that the "Controlled pull down current" spec. Equivalently a pull up
current stabilizes the state when the inputs are in high state.
Parameter Test Conditions Symbol Min Typ. Max Unit
Virtual source size Method: (1-1/e) encircled
energy
d1.82.0 mm
Maximum intensity for class 1 IEC60825-1 or EN60825-1,
edition Jan. 2001, operating
below the absolute maximum
ratings
I
e
(500)
*) **)
mW/sr
Parameter Test Conditions Symbol Min Typ. Max Unit
Supply voltage V
CC1
2.7 5.5 V
Idle supply current SD = Low, E
e
= 1 klx I
CC1
550 900 µA
Average dynamic supply
current, transmitting
I
IRED
= 500 mA, 25 % Duty
Cycle
I
CC
1100 1500 µA
Shutdown supply current SD = High, T = 25 °C, E
e
= 0 klx I
SD
1µA
SD = High, T = 25 °C,
E
e
= 1 klx
*)
I
SD
2.5 µA
Standby supply current SD = High, T = 85 °C, not
ambient light sensitive
I
SD
5µA
Operating temperature range T
A
- 25 + 85 °C
Output voltage low, RXD C
Load
= 15 pF, I
OL
= 1 mA V
OL
0.4 V
Output voltage high, RXD I
OH
= - 500 µA V
OH
0.8 x V
logic
V
I
OH
= - 250 µA, C
Load
= 15 pF V
OH
0.9 x V
logic
V
RXD to V
CC1
impedance R
RXD
400 500 600 kΩ
Input voltage low (TXD, SD) V
IL
- 0.5 0.5 V
Input voltage high (TXD, SD)
CMOS level
**)
V
IH
V
logic
- 0.5 V
logic
+ 0.5 V
Input leakage current (TXD, SD) V
in
= 0.9 x V
logic
I
ICH
- 2 + 2 µA
Controlled pull down current SD, TXD = "0" to "1",
0 < V
in
< 0.15 V
logic
I
IRTx
+ 150 µA
SD, TXD = "0" to "1",
V
in
> 0.7 V
logic
I
IRTx
- 1 0 1 µA
Input capacitance (TXD, SD) C
IN
5pF
www.vishay.com
246
Document Number 82616
Rev. 1.6, 02-Mar-07
TFDU5307
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
T
amb
= 25 °C, V
CC
= 2.7 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
*)
Some ENDECs are not able to decode short pulses as valid SIR pulses. Therefore this additional mode was added in TFDU5307.
TFDU5307 is set to the "short output pulse" as default after power on, also after recovering from the shutdown mode (SD must have been
longer active than 1.5 ms). For mode changing see the chapter "Programming"
Parameter Test Conditions Symbol Min Ty p. Max Unit
Minimum detection threshold
irradiance
9.6 kbit/s to 1.152 Mbit/s
λ = 850 nm - 900 nm
E
e
40
(4)
90
(9)
mW/m
2
(µW/cm
2)
Maximum detection threshold
irradiance
λ = 850 nm - 900 nm E
e
5
(500)
kW/m
2
(mW/cm
2
)
No detection receiver input
irradiance
Threshold! No RXD output
below this irradiance value
allowed
E
e
4
(0.4)
mW/m
2
(µW/cm
2)
Rise time of output signal 10 % to 90 %, C
L
= 15 pF,
V
logic
= V
CC
t
r(RXD)
20 60 ns
Fall time of output signal 90 % to 10 %, C
L
= 15 pF,
V
logic
= V
CC
t
f(RXD)
20 60 ns
RXD pulse width of output
signal, default mode after power
on or reset
Input pulse length
P
Wopt
> 200 ns
t
PW
300 400 500 ns
SIR ENDEC compatibility
mode
*)
: RXD pulse width of
output signal
Input pulse length
P
Wopt
> 200 ns, see chapter
"Programming"
t
PW
1.7 2.0 2.9 µs
Stochastic jitter, leading edge
Input irradiance = 100 mW/m
2
,
1.152 Mbit/s, 576 kbit/s
80 ns
Input irradiance = 100 mW/m
2
,
≤ 115.2 kbit/s
350 ns
Standby /Shutdown delay After shutdown active or (SD low
to high transition)
0.6 1.5 ms
Shutdown active time window
for programming
During this time the pulse
duration of the output can be
programmed to the application
mode. see chapter
"Programming"
600 µs
Receiver start up time power on
delay shutdown recovery delay
After shutdown inactive (SD
high to low transition) and after
power-on
300 µs
Latency t
L
200 µs
TFDU5307
Document Number 82616
Rev. 1.6, 02-Mar-07
Vishay Semiconductors
www.vishay.com
247
Transmitter
T
amb
= 25 °C, V
CC
= 2.7 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
*)
Note: Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for
the standard Remote Control applications with codes as e.g. Philips RC5/RC6
®
or RECS 80. When operated under IrDA full range con-
ditions (>120 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers
are used.
**)
Typ. conditions for I
f
= 420 mA, V
CC2
= 3.3 V, R
s
= 2.3 Ω, V
CC2
= 5.0 V, R
s
= 6.4 Ω
Parameter Test Conditions Symbol Min Typ. Max Unit
IRED operating current,
recommended serial resistor for
MIR applications
V
CC2
= 3.3 V: R
S
= 2.0 Ω
V
CC2
= 5.0 V: R
S
= 5.6 Ω
I
D
450 500 mA
Output leakage IRED current TXD = 0 V, 0 < V
CC1
< 5.5 V I
IRED
- 1 1 µA
Output radiant intensity
recommended application
circuit, see figure 1
α = 0 °, I
f
=420 mA
TXD = High, SD = Low
**)
I
e
110 500 mW/sr
α = 0 °, 15 °, I
f
=420 mA
TXD = High, SD = Low
**)
I
e
70 120 500 mW/sr
Output radiant intensity V
CC1
= 5.0 V, α = 0 °, 15°
TXD = Low or SD = High
(Receiver is inactive as long as
SD = High)
I
e
0.04 mW/sr
Output radiant intensity, angle of
half intensity
α ± 24 °
Peak - emission wavelength
*)
λ
p
880 900 nm
Spectral bandwidth Δλ 45 nm
Optical rise time, fall time t
ropt
, t
fopt
640ns
Optical output pulse duration Input pulse width 217 ns,
1.152 Mbit/s
Note: IrDA specification for MIR
t
opt
190
(147.6)
217 240
(260)
ns
ns
Input pulse width t
TXD
< 80 µs t
opt
20 t
TXD
µs
Input pulse width t
TXD
≥ 80 µs t
opt
20 85 µs
Optical overshoot 25 %
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

TFDU5307-TT1

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Manufacturer:
Vishay Semiconductors
Description:
Infrared Transceivers MIR 1.152 Mbits Infrared
Lifecycle:
New from this manufacturer.
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