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STN724

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics STF724 - STN724
4/11
2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 60 V
10 µA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 30 V
100 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
10 µA
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= 100 µA
60 V
V
(BR)CEO
(1)
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5 %
Collector-emitter
breakdown voltage (I
B
= 0)
I
C
= 10 mA
30 V
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 100 µA
5V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 1 A I
B
= 50 mA
I
C
= 2 A I
B
= 100 mA
I
C
= 3 A I
B
= 15 0mA
0.4
0.7
1.1
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 2 A I
B
= 100 mA
1.2 V
h
FE
DC current gain
I
C
= 100 mA V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
I
C
= 3 A V
CE
= 2 V
100
80
30
300
f
T
Transition frequency
V
CE
= 10 V I
C
= 0.1 A
100 MHz
STF724 - STN724
5/11
2.1 Electrical characteristics (curves)
Figure 2. DC Current Gain Figure 3. DC Current Gain
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Figure 6. Switching times on resistive
load
Figure 7. Switching times on resistive
load
Electrical characteristics STF724 - STN724
6/11
Figure 8. Reverse biased safe
operating area
P1-P3P4-P6P7-P9P10-P11

STN724

Mfr. #:
Buy STN724
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN TRANSISTOR
Lifecycle:
New from this manufacturer.
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