2SD1760TLQ Datasheet 2SD1760TLQ, 2SD1760TLP, 2SD1760TLR | P1-P3

2SD1760 / 2SD1864

Transistors

Power Transistor (50V, 3A)

2SD1760 / 2SD1864

!

!!

!Features

1) Low V

CE(sat)

.

V

CE(sat)

= 0.5V (Typ.)

(I

C

/I

B

= 2A / 0.2A)

2) Complements the 2SB1184 / 2SB1243.

!

!!

!Structure

Epitaxial planar type

NPN silicon transistor

!

!!

!External dimensions (Units : mm)

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : ATV

1.0

6.8

±

0.2

2.5

±

0.2

1.05

0.45

±

0.1

2.54

0.5

±

0.1

0.9

4.4

±

0.2

14.5

±

0.5

(1)

(2)

(3)

0.65Max.

2SD1760 2SD1864

−0.1

+0.2

−0.1

+0.2

+0.3

−0.1

2.3±0.22.3±0.2

0.65±0.1

0.9

0.75

1.0±0.2

0.55±0.1

9.5±0.5

5.5

1.5±0.3

2.5

1.5

2.3

0.5±0.1

6.5±0.2

5.1

C0.5

(3)

(2)

(1)

0.9

!

!!

!

Absolute maximum ratings

(Ta=25°C)

Parameter Symbol Limits Unit

V

CBO

60 V

V

CEO

50 V

V

EBO

5V

I

C

3 A (DC)

4.5 A (Pulse)

∗1

Tj 150

°C

Tstg

−55~+150 °C

2SD1864

2SD1760

1

15

W (Tc=25°C)

∗2

P

C

∗1 Single pulse, P

W

=100ms

∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm

2

or larger.

W

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector power

dissipation

2SD1760 / 2SD1864

Transistors

!

!!

!Electrical characteristics (Ta=25°C)

Parameter Symbol

BV

CBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

fT

Cob

Min.

60

50

5

−

82 390

−

0.5

90

40

−

1

−

VI

C=50µA

I

C=1mA

I

E=50µA

V

CB=40V

V

EB=4V

V

CE=3V, IC=0.5A

V

CE=5V, IE=−500mA, f=30MHz

I

C/IB=2A/0.2A

∗

VCB=10V, IE=0A, f=1MHz

V

µA

−

V

MHz

pF

Typ. Max. Unit Conditions

∗ Measured using pulse current.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Transition frequency

!

!!

!

Packaging specifications and h

FE

Package Taping

Code

2SD1760

Type

TL

2500

h

FE

TV2

2500

−

2SD1864

PQR

Basic ordering

unit (pieces)

h

FE

values are classified as follows:

Item

h

FE

R

180~390

Q

120~270

P

82~180

!

!!

!Electrical characteristic curves

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.1 Grounded emitter propagation

characteristics

0

10

0.01

2

5

1

0.2

0.5

0.1

0.02

0.05

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

CE

=

3V

25°C

−25°C

Ta = 100°C

COLLECTOR CURRENT : I

C

(

A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(

V)

Fig.2 Grounded emitter output

characteristics ( Ι )

0 12345

0

0.5

1.0

1.5

2.0

2.5

3.0

15mA

20mA

25mA

30mA

35mA

40mA

50mA

10mA

5mA

I

B

= 0mA

45mA

Ta = 25°C

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.3 Grounded-emitter output

characteristics( ΙΙ )

0 1020304050

0

0.5

1.0

1.5

2.0

2.5

3.0

Ta = 25°C

50mA

45mA

40mA

35mA

30mA

25mA

15mA

10mA

P

C

= 15W

I

B

= 5mA

20mA

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC

(A)

Fig.4 DC current gain vs.

collector current( Ι )

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5

1000

500

200

100

50

20

10

5

2

1

Ta = 25°C

10

VCE = 5V

3V

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

Fig.5 DC current gain vs.

collector curren( ΙΙ )

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

1000

500

200

100

50

20

10

5

2

1

V

CE

= 3V

Ta = 100°C

−25°C

25°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C (A)

Fig.6 Collector-emitter saturation

voltage vs. collector current

0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

Ta = 25°C

I

C

/I

B

= 50

20

10

2SD1760 / 2SD1864

Transistors

COLLECTOR CURRENT : I

C (A)

COLLECTOR SATURATION VOLTAGE : V

CE (sat) (V)

BASE SATURATION VOLTAGE : V

BE (sat) (V)

Fig.7 Collector-emitter saturation

voltage vs. collector current

Base-emitter saturation voltage

vs. collector current

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

10

5

2

1

0.5

0.2

0.1

0.05

0.02

0.01

l

C

/l

B

= 10

V

BE (sat)

V

CE (sat)

Ta = −25°C

100°C

25°C

Ta = 100°C

−25°C

EMITTER CURRENT : −I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.8 Gain bandwidth product vs.

emitter current

1 2 5 10 20 50 100 200 5001000

1000

500

200

50

20

100

10

2

5

1

Ta = 25°C

V

CE

= 5V

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.9 Collector output capacitance

vs. collector-base voltage

0.1 0.2 0.5 1 2 5 10 20 50 100

100

200

500

1000

10

20

50

2

5

1

Ta = 25

°C

f = 1MHz

I

E

= 0A

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.10 Safe operating area

(2SD1760)

0.1

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

0.2 0.5 1 2 5 10 20 50 100

Ta = 25°C

∗Single pulse

P

W

=

10ms∗

P

W

=

100ms∗

DC

V

CE

=5v

I

C

=0.2A

1 10 1sec 10sec 100sec100

1

0.1

10

100

TIME : T

(ms)

TRANSIENT THERMAL RESISTANCE : R

th

(°C/W)

Fig.11 Transient thermal resistance

(2SD1760)

0.2 0.5 1

2

5 10 20 50 100

5

2

1

0.1

0.2

0.5

0.02

0.05

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

COLLECTOR CURRENT : I

C

(A)

Ta=25°C

Single

nonrepetitive

pulse

Pw=10ms

Pw=100ms

DC

Fig.12 Safe operating area

(2SD1864)

1 10 100 1 10sec 100sec 1000sec

10

1

100

0.1

TIME : T

(ms)

TRANSIENT THERMAL RESISTANCE : R

th

(°C/W)

Fig.13 Transient thermal resistance

(2SD1864)

2SD1760TLQ

2SD1760TLQ

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