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MBR1H100SFT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1 Publication Order Number:
MBR1H100SF/D
MBR1H100SFT3G,
NRVB1H100SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
Human Body Model, 3B
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape
• Device Marking: L1H
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MARKING DIAGRAM
L1H = Specific Device Code
M = Date Code
G = Pb−Free Package
http://onsemi.com
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
100 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR1H100SFT3G SOD−123
(Pb−Free)
10000/Tape & Re
el
L1HMG
G
NRVB1H100SFT3G SOD−123
(Pb−Free)
10000/Tape & Re
el
(Note: Microdot may be in either location)
MBR1H100SFT3G, NRVB1H100SFT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(T
L
= 162°C)
I
O
1.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
23 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
330 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.76
0.84
0.61
0.68
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
40
0.5
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
MBR1H100SFT3G, NRVB1H100SFT3G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.80.60.40 0.2
0.1
1
10
100
1.61.41.21.00.80.60.4
0.1
1
10
100
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
908060503020100
0.00001
0.0001
0.001
0.01
0.1
1
10
908060503020100
I
F
, FORWARD CURRENT (A)
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
1.2 1.41.0
150°C
125°C
25°C
40 70 100
150°C
125°C
25°C
40 70 100
Figure 5. Current Derating
T
L
, LEAD TEMPERATURE (°C)
165150145140135
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
Square Wave
155 170160
R
q
JL
= 23°C/W
I
O
, AVERAGE FORWARD CURRENT (A)
10.80.60.40.20
0
0.2
0.4
0.6
0.8
1.0
P
FO
, AVERAGE POWER DISSIPATION (W)
T
J
= 175°C
dc
Square Wave
Figure 6. Forward Power Dissipation
0.20
150°C
125°C
25°C
0.00001
0.0001
0.001
0.01
0.1
1
10
150°C
125°C
25°C
175
1.61.41.2
P1-P3P4-P5

MBR1H100SFT3G

Mfr. #:
Buy MBR1H100SFT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 100V
Lifecycle:
New from this manufacturer.
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