Characteristics STPS15H100C
2/8 DocID8562 Rev 7
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.58 x I
F(AV)
+ 0.012 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100
V
I
F(RMS)
Forward rms current 10
A
I
F(AV)
Average forward current, δ = 0.5, square
wave
T
c
= 135 °C
(1)
Per diode 7.5
A
Per device 15
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75
A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
475
W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(2)
175 °C
1. Value based on R
th(j-c)
max (per diode)
2. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–
--------------------------
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 4
°C/WTotal 2.4
R
th(c)
Coupling 0.7
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
3µA
T
j
= 125 °C 1.3 4 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C I
F
= 7.5 A 0.8
V
T
j
= 125 °C I
F
= 7.5 A 0.62 0.67
T
j
= 25 °C I
F
= 12 A 0.85
T
j
= 125 °C I
F
= 12 A 0.68 0.73
T
j
= 25 °C I
F
= 15 A 0.89
T
j
= 125 °C I
F
= 15 A 0.71 0.76
1. t
p
= 5 ms, < 2%
2. t
p
= 380 µs, < 2%
