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MC1413DR2G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 8
1 Publication Order Number:
MC1413/D
MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
The MC1413, B with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
Features
• Pb−Free Packages are Available*
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Figure 1. Representative Schematic Diagram
5.0 k
3.0 k
Pin 9
1/7 MC1413, B
2.7 k
Figure 2. PIN CONNECTIONS
9
10
11
12
13
14
15
16
8
7
6
5
4
3
2
1
(Top View)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
PDIP−16
P SUFFIX
CASE 648
1
16
1
16
SOIC−16
D SUFFIX
CASE 751B
Device Package Shipping
†
ORDERING INFORMATION
MC1413D SOIC−16 48 Units/Rail
MC1413DR2 SOIC−16
2500 Tape & Reel
See general marking information in the device marking
section on page 5 of this data sheet.
DEVICE MARKING INFORMATION
MC1413P PDIP−16 25 Units/Rail
MC1413BD SOIC−16 48 Units/Rail
MC1413BDR2 SOIC−16
2500 Tape & Reel
MC1413BP PDIP−16
25 Units/Rail
NCV1413BDR2 SOIC−16 2500 Tape & Reel
MC1413PG PDIP−16
(Pb−Free)
25 Units/Rail
MC1413BDR2G SOIC−16
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MC1413DR2G SOIC−16
(Pb−Free)
2500 Tape & Reel
MC1413DG SOIC−16
(Pb−Free)
48 Units/Tube
MC1413BDG SOIC−16
(Pb−Free)
48 Units/Rail
MC1413BPG PDIP−16
(Pb−Free)
25 Units/Rail
NCV1413BDR2G SOIC−16
(Pb−Free)
2500 Tape & Reel
MC1413, MC1413B, NCV1413B
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Rating
Symbol Value Unit
Output Voltage V
O
50 V
Input Voltage V
I
30 V
Collector Current − Continuous I
C
500 mA
Base Current − Continuous I
B
25 mA
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
T
A
−20 to +85
−40 to +85
−40 to +125
°C
Storage Temperature Range T
stg
−55 to +150 °C
Junction Temperature T
J
150 °C
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
Case 751B, D Suffix
R
q
JA
67
100
°C/W
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
Case 751B, D Suffix
R
q
JC
22
20
°C/W
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
400
1500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MC1413, MC1413B, NCV1413B
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Output Leakage Current
(V
O
= 50 V, T
A
= +85°C)
(V
O
= 50 V, T
A
= +25°C)
All Types
All Types
I
CEX
−
−
−
−
100
50
mA
Collector−Emitter Saturation Voltage
(I
C
= 350 mA, I
B
= 500 mA)
(I
C
= 200 mA, I
B
= 350 mA)
(I
C
= 100 mA, I
B
= 250 mA)
All Types
All Types
All Types
V
CE(sat)
−
−
−
1.1
0.95
0.85
1.6
1.3
1.1
V
Input Current − On Condition
(V
I
= 3.85 V) MC1413, B
I
I(on)
− 0.93 1.35
mA
Input Voltage − On Condition
(V
CE
= 2.0 V, I
C
= 200 mA)
(V
CE
= 2.0 V, I
C
= 250 mA)
(V
CE
= 2.0 V, I
C
= 300 mA)
MC1413, B
MC1413, B
MC1413, B
V
I(on)
−
−
−
−
−
−
2.4
2.7
3.0
V
Input Current − Off Condition
(I
C
= 500 mA, T
A
= 85°C)
All Types I
I(off)
50 100 −
mA
DC Current Gain
(V
CE
= 2.0 V, I
C
= 350 mA)
h
FE
1000 − − −
Input Capacitance C
I
− 15 30 pF
Turn−On Delay Time
(50% E
I
to 50% E
O
)
t
on
− 0.25 1.0
ms
Turn−Off Delay Time
(50% E
I
to 50% E
O
)
t
off
− 0.25 1.0
ms
Clamp Diode Leakage Current
(V
R
= 50 V)
T
A
= +25°C
T
A
= +85°C
I
R
−
−
−
−
50
100
mA
Clamp Diode Forward Voltage
(I
F
= 350 mA)
V
F
− 1.5 2.0 V
NOTE: NCV1413B T
low
= −40°C, T
high
= +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
site and change control.
P1-P3P4-P6P7-P8

MC1413DR2G

Mfr. #:
Buy MC1413DR2G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors High Voltage High Current Darlington
Lifecycle:
New from this manufacturer.
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