Document Number: 91389
www.vishay.com
S11-1055-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFBF30S, SiHFBF30S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the D
2
PAK (TO-263) contribute to
its wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 36 mH, R
g
= 25 , I
AS
= 3.6 A (see fig. 12).
c. I
SD
3.6 A, dI/dt 70 A/μs, V
DD
600, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 900
R
DS(on)
()V
GS
= 10 V 3.7
Q
g
(Max.) (nC) 78
Q
gs
(nC) 10
Q
gd
(nC) 42
Configuration Single
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBF30S-GE3
Lead (Pb)-free
IRFBF30SPbF
SiHFBF30S-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
900
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.6
A
T
C
= 100 °C 2.3
Pulsed Drain Current
a
I
DM
14
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
250 mJ
Repetitive Avalanche Current
a
I
AR
3.6 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
125 W
Peak Diode Recovery dV/dt
c
dV/dt 1.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
