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AUIRFN7107TR

P1-P3P4-P6P7-P9
AUIRFN7107
Base Part Number Package Type
Standard Pack
Complete Part Number
Form Quantity
AUIRFN7107
PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN7107TR
V
DSS
75V
R
DS(on)
max
(@V
GS
= 10V)
8.5m
Q
G (typical)
51nC
I
D
(@T
C (Bottom)
= 25°C)
75A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
PQFN 5X6 mm
G D S
Gate Drain Source
Applications
Injection
Heavy Loads
DC-DC Converter
Parameter Max. Units
V
DS
Drain-to-Source Voltage 75 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 14
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 12
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V 75
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V 53
I
DM
Pulsed Drain Current 300
P
D
@T
A
= 25°C Power Dissipation 4.4
W
P
D
@T
C(Bottom)
= 25°C Power Dissipation 125
Linear Derating Factor 0.029 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 123
mJ
I
AR
Avalanche Current 45
A
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
HEXFET
®
POWER MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon are. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
1 2015-10-12
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUIRFN7107
2 2015-10-12
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, I
D
= 1.0mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 6.9 8.5
m
V
GS
= 10V, I
D
= 45A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 100µA
R
G
Internal Gate Resistance ––– 0.82 –––

gfs Forward Transconductance 73 ––– ––– S V
DS
= 25V, I
D
= 45A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 75V, V
GS
= 0V
––– ––– 250 V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge ––– 51 77
nC
I
D
= 45A
Q
gs
Gate-to-Source Charge ––– 15 –––
V
DS
= 38V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 14 –––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 37 ––– I
D
= 45A, V
DS
=0V, V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 8.0 –––
ns
V
DD
= 75V
t
r
Rise Time ––– 12 –––
I
D
= 45A
t
d(off)
Turn-Off Delay Time ––– 19 –––
R
G
= 1.8
t
f
Fall Time ––– 7.0 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 3001 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 371 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 151 –––
ƒ = 1.0 MHz
Symbol Parameter Typ. Max. Units
R
JC
(Bottom)
Junction-to-Case ––– 1.2
°C/W
R
JC
(Top)
Junction-to-Case ––– 27
R
JA
Junction-to-Ambient ––– 34
R
JA
(<10s)
Junction-to-Ambient ––– 22
Thermal Resistance
Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 75 A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– ––– A
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.85 1.3 V T
J
= 25°C, I
S
= 45A, V
GS
= 0V
t
rr
Reverse Recovery Time
––– 28 –––
ns
T
J
= 25°C, I
F
= 45A, V
DD
= 38V
Q
rr
Reverse Recovery Charge
––– 145 –––
nC
di/dt = 500A/µs
300
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L =0.12mH, R
G
= 50, I
AS
= 45A.
Pulse width 400µs; duty cycle 2%.
R
is measured at TJ of approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
AUIRFN7107
3 2015-10-12
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
Fig. 4 Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 25°C
4.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
BOTTOM 4.0V
2 3 4 5 6 7 8
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
60µs PULSE WIDTH
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 10203040506070
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 60V
V
DS
= 38V
V
DS
= 15V
I
D
= 45A
P1-P3P4-P6P7-P9

AUIRFN7107TR

Mfr. #:
Buy AUIRFN7107TR
Manufacturer:
Infineon / IR
Description:
MOSFET 75V Single N-Channel HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
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