NCV5171, NCV5173
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16
T
J
+ T
A
)(P
D
q
JA
)
where:
T
J
= IC or FET junction temperature (°C);
T
A
= ambient temperature (°C);
P
D
= power dissipated by part in question (W);
q
JA
= junction−to−ambient thermal resistance (°C/W).
For the NCV5171/73, q
JA
=165°C/W.
Once the designer has calculated T
J
, the question of
whether the NCV5171/73 can be used in an application is
settled. If T
J
exceeds 150°C, the absolute maximum
allowable junction temperature, the NCV5171/73 is not
suitable for that application.
If T
J
approaches 150°C, the designer should consider
possible means of reducing the junction temperature.
Perhaps another converter topology could be selected to
reduce the switch current. Increasing the airflow across the
surface of the chip might be considered to reduce T
A
.
Circuit Layout Guidelines
In any switching power supply, circuit layout is very
important for proper operation. Rapidly switching currents
combined with trace inductance generates voltage
transitions that can cause problems. Therefore the following
guidelines should be followed in the layout.
1. In boost circuits, high AC current circulates within the
loop composed of the diode, output capacitor, and
on−chip power transistor. The length of associated
traces and leads should be kept as short as possible. In
the flyback circuit, high AC current loops exist on both
sides of the transformer. On the primary side, the loop
consists of the input capacitor, transformer, and
on−chip power transistor, while the transformer,
rectifier diodes, and output capacitors form another
loop on the secondary side. Just as in the boost circuit,
all traces and leads containing large AC currents
should be kept short.
2. Separate the low current signal grounds from the
power grounds. Use single point grounding or ground
plane construction for the best results.
3. Locate the voltage feedback resistors as near the IC as
possible to keep the sensitive feedback wiring short.
Connect feedback resistors to the low current analog
ground.
NCV5171, NCV5173
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17
NCV5171/73
3.3 V
IN
V
C
(1 )
FB (2)
0.1 mF
V
CC
(5)
AGND (6)
PGND (7)
V
SW
(8)
200 pF
MBRS120T3
22 mF
22 mH
Figure 35. Additional Application Diagram, 3.3 V Input, 5.0 V/ 400 mA Output Boost Converter
10 mF
GND
5.0 k
3.6 k
GND
5.0 V
O
1.3 k
+
+
+
NCV5171/73
+12 V
V
C
(1 )
FB (2)
V
CC
(5)
AGND (6)
PGND (7)
V
SW
(8)
MBRS140T3
22 mF
47 mF
Figure 36. Additional Application Diagram, 2.7 to 13 V Input, +12 V/ 200 mA Output Flyback Converter
1.0 mF
GND
2.0 k
10.72 k
GND
1.28 k
47 mF
47 nF
4.7 nF
V
CC
−12 V
T1
1:2
P6KE−15A
1N4148
MBRS140T3
NCV5171/73
V
C
(1 )
FB (2)
V
CC
(5)
AGND (6)
PGND (7)
V
SW
(8)
2.2 mF
Figure 37. Additional Application Diagram, −9.0 V to −28 V Input, −5.0 V/700 mA Output Inverted Buck Converter
15 mH
GND
300
GND
5.0 k
.01 mF
200 pF
V
IN
−5.0
V
OUT
1.1 k
22 mF
Low
ESR
NCV5171, NCV5173
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18
NCV5171/73
+
+
V
C
(1 )
FB (2)
V
CC
(5)
AGND (6)
PGND (7)
V
SW
(8)
22 mF
Figure 38. Additional Application Diagram, 2.7 V to 28 V Input, 5.0 V Output SEPIC Converter
GND
12.76 k
GND
5.0 k
.01 mF
200 pF
V
CC
22 mH
Low
ESR
22 mF
22 mH
22 mF
37.24 k
5.0 V
NCV5171/73
V
C
FB
AGND
PGND
V
SW
Figure 39. Additional Application Diagram, 4.0 V Input, 100 V/ 10 mA Output Boost Converter with
Output Voltage Multiplier
GND
GND
.01 m
V
CC
4.0 V
Test
SS
1
2
3
4
8
7
6
5
C11
R1 R2
R3
C10
.1 m
C8
C9
C1 C2 C3
C4 C5 C6
C7
.1 m
.1 m .1 m
.1 m
50 V
50 V 50 V 50 V
.1 m
50 V
.1 m
50 V
.1 m
50 V
D1 D1 D1 D1 D1 D1 D1
1N41481N41481N41481N41481N41481N41481N4148
99.755 k/0.1 W, 1%1.245 k/0.1 W, 1%
2.0 k
.1 m
10 m
100 V
O
+
+
+
NCV5171/73
V
C
FB
V
CC
AGND
PGND
V
SW
Figure 40. Additional Application Diagram, 5.0 V Input, ± 12 V Output Dual Boost Converter
GND
GND
0.01 mF
200 pF
22 mF
15 mH
22 mF
1.28 k
5.0 k
SS
Test
1
2
3
45
6
7
8
+5.0 V
SS
C6
C1
R1
R2 R3
10.72 k
C5
22 mF
C3
D3
D2
L1
D1
−12 V
+12 V
C4
0.1 mF

NCV5173EDR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators 1.5A 560KHZ BOOST RG
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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