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SI7946DP-T1-GE3

P1-P3P4-P6
Vishay Siliconix
Si7946DP
Document Number: 72282
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
1
Dual N-Channel 150-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• New Low Thermal Resistance PowerPAK
®
Package
• Dual MOSFET for Space Savings
• PWM Optimized for Fast Switching
• Avalanche Rated
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
150
0.150 at V
GS
= 10 V
3.3
0.168 at V
GS
= 6 V
3.1
Ordering Information: Si7946DP-T1-E3 (Lead (Pb)-free)
Si7946DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFE
T
D
2
G
2
S
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.3 2.1
A
T
A
= 70 °C
2.6 1.7
Pulsed Drain Current
I
DM
10
Continuous Source Current (Diode Conduction)
a
I
S
2.9 1.2
Single Avalanche Current L = 0.1 mH
I
AS
9
Single Avalanche Energy
E
AS
4mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.4
W
T
A
= 70 °C
2.2 0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
26 35
°C/WSteady State 60 85
Maximum Junction-to-Case (Drain) Steady State
R
thJC
3.2 4.2
www.vishay.com
2
Document Number: 72282
S09-0227-Rev. C, 09-Feb-09
Vishay Siliconix
Si7946DP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
24.0V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 150 V, V
GS
= 0 V
1
µA
V
DS
= 150 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 3.3 A
0.124 0.150
Ω
V
GS
= 6 V, I
D
= 3.1 A
0.137 0.168
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.3 A
9S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.87 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 75 V, V
GS
= 10 V, I
D
= 3.3 A
12.6 20
nCGate-Source Charge
Q
gs
2.8
Gate-Drain Charge
Q
gd
4.5
Gate Resistance
R
g
f = 1 MHz 3.5 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 75 V, R
L
= 75 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
11 20
ns
Rise Time
t
r
15 25
Turn-Off Delay Time
t
d(off)
30 45
Fall Time
t
f
20 30
Source-Drain Reverse Recovery
Time
t
rr
I
F
= 2.9 A, dI/dt = 100 A/µs
62 100
Output Characteristics
0
2
4
6
8
10
012345
V
GS
= 10 V thru 6 V
5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
Transfer Characteristics
0
2
4
6
8
10
0123456
T
C
= 125 °C
- 55 °C
25 °C
V
GS
-
Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72282
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
3
Vishay Siliconix
Si7946DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.04
0.08
0.12
0.16
0.20
0246810
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 6 V
0
2
4
6
8
10
03691215
V
DS
= 75 V
I
D
= 3.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
0 1020304050607080
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.4
0.8
1.2
1.6
2.0
2.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.3 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0246810
I
D
= 1 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 3.3 A
P1-P3P4-P6

SI7946DP-T1-GE3

Mfr. #:
Buy SI7946DP-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 150V 2.1A PPAK SO-8
Lifecycle:
New from this manufacturer.
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