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VS-180NQ045PBF

P1-P3P4-P6
VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
1
Document Number: 94148
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 180 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-180NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
IF
(AV)
180 A
V
R
45 V
Package HALF-PAK (D-67)
Circuit Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 180 A
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 27 000 A
V
F
180 A
pk
, T
J
= 125 °C 0.63 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-180NQ045PbF UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 105 °C, rectangular waveform 180 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
27 000
A
10 ms sine or 6 ms rect. pulse 2400
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 22 A, L = 1 mH 243 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
36 A
VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
2
Document Number: 94148
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
180 A
T
J
= 25 °C
0.60
V
360 A 0.83
180 A
T
J
= 125 °C
0.63
360 A 0.89
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
15
mA
T
J
= 125 °C 600
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 7700 pF
Typical series inductance L
S
From top of terminal hole to mounting plane 6.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
0.28
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.05
Approximate weight
30 g
1.06 oz.
Mounting torque
minimum
Non-lubricated threads
3 (26.5)
N m
(lbf in)
maximum 4 (35.4)
Terminal torque
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.2 0.4 0.8 1.0 1.2
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.6
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0102030 45
0.1
1
10
100
1000
40
0.01
35
10 000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
51525
VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
3
Document Number: 94148
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
02030
40
1000
10 000
10
50
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 250100
80
90
110
130
160
50 150 200
120
140
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
150
100
0
60
140
200
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
80 160
180
80
20
604020
100
120
120
140
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
40
100
160
P1-P3P4-P6

VS-180NQ045PBF

Mfr. #:
Buy VS-180NQ045PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 120 Amp 45 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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