MMDT2222A-7-F Datasheet MMDT2222A-7-F | P1-P3

MMDT2222A

Document number: DS30125 Rev. 14 - 2

1 of 6

www.diodes.com

April 2016

MMDT2222A

40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363

Features

• BV

CEO

> 40V

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Complementary PNP Type: MMDT2907A

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Finish. Solderable per MIL-STD-

202, Method 208

• Weight: 0.006 grams (Approximate)

Ordering Information (Note 4)

Product

Status

Compliance

Marking

Reel Size (inches)

Tape Width (mm)

Quantity Per Reel

MMDT2222A-7-F

Active

AEC-Q101

K1P

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2013

2014

2015

2016

2017

2018

2019

2020

Code

A

B

C

D

E

F

G

H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8 9 O N D

Top View

SOT363

e3

Device Schematic

Top View

K1P = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex:

D = 2016)

M or M = Month (ex: 9 = September)

K1P YM

SOT363

MMDT2222A

Document number: DS30125 Rev. 14 - 2

2 of 6

www.diodes.com

April 2016

MMDT2222A

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

75

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

6.0

V

Continuous Collector Current

I

C

600

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

200

mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

625

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

ESD Ratings (Note 6)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristic and Derating Information

MMDT2222A

Document number: DS30125 Rev. 14 - 2

3 of 6

www.diodes.com

April 2016

MMDT2222A

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CBO

75



V

I

C

= 10µA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

40



V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

6.0



V

I

E

= 100µA, I

C

= 0

Collector-Base Cut-Off Current

I

CBO



10

nA

µA

V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

A

= +150°C

Collector Cut-Off Current

I

CEX



10

nA

V

CE

= 60V, V

BE(OFF)

= 3.0V

Emitter-Base Cut-Off Current

I

EBO



10

nA

V

EB

= 3V, I

C

= 0

Base Cutoff Current

I

BL



20

nA

V

CE

= 60V, V

BE(OFF)

= 3.0V

ON CHARACTERISTICS (Note 7)

DC Current Gain

h

FE

35

50

75

100

40

50

35



300



I

C

= 100µA, V

CE

= 10V

I

C

= 1.0mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V

I

C

= 150mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V, T

A

= -55°C

I

C

= 150mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)



0.3

1.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

Base-Emitter Saturation Voltage

V

BE(SAT)

0.6



1.2

2.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo



8.0

pF

V

CB

= 10V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo



25

pF

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

Current Gain-Bandwidth Product

f

T

300



MHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

Noise Figure

N

F



4.0 dB

V

CE

= 10V, I

C

= 100μA,

R

S

= 1.0kΩ,

f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

t

D



10

ns

V

CC

= 30V, I

C

= 150mA,

V

BE(OFF)

= -0.5V, I

B1

= 15mA

Rise Time

t

R



25

ns

Storage Time

t

S



225

ns

V

CC

= 30V, I

C

= 150mA,

I

B1

= I

B2

= 15mA

Fall Time

t

F



60

ns

Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMDT2222A-7-F

MMDT2222A-7-F

Products related to this Datasheet