STPS10L45CG-TR

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STPS10L45CT/CG/CF/CFP
July 2003 - Ed: 3B
LOW DROP POWER SCHOTTKY RECTIFIER
®
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB and D
2
PAK, these devices are
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
DESCRIPTION
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
45 V
I
F(RMS)
RMS forward current
20 A
I
F(AV)
Average
forward current
TO-220AB
D
2
PAK
Tc =135°C
δ = 0.5
Per diode
Per device
5
10
A
ISOWATT220AB
TO-220FPAB
Tc =115°C
δ = 0.5
Per diode
Per device
5
10
A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
150 A
I
RRM
Repetitive peak reverse current tp=2µssquare F=1kHz
1A
I
RSM
Non repetitive peak reverse current tp = 100 µs square
2A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C
2700 W
T
stg
Storage temperature range
- 65 to + 150 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2x5 A
V
RRM
45 V
Tj (max) 150°C
V
F
(max) 0.46 V
MAIN PRODUCTS CHARACTERISTICS
D
2
PAK
STPS10L45CG
A1
K
A2
A2
K
A1
K
A1
A2
TO-220AB
STPS10L45CT
ISOWATT220AB
STPS10L45CF
*:
dPtot
dTj Rth j a
<
1
()
thermal runaway condition for a diode on its own heatsink
A1
A2
K
TO-220FPAB
STPS10L45CFP
STPS10L45CT/CG/CF/CFP
2/7
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
Tj = 25°C V
R
=V
RRM
0.15 mA
Tj = 125°C
45 90 mA
V
F
*
Forward voltage drop Tj = 25°CI
F
=5A
0.53 V
Tj = 125°C I
F
=5A
0.36 0.46
Tj=25°CI
F
=10A
0.67
Tj = 125°C I
F
=10A
0.49 0.59
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.33xI
F(AV)
+ 0.026 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AB
D
2
PAK
Per diode
Total
3
1.7
°C/W
R
th (c)
Coupling 0.35
R
th (j-c)
Junction to case
ISOWATT220AB
TO-220FPAB
Per diode
Total
5
3.8
°C/W
R
th (c)
Coupling 2.5
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av) (A)
PF(av)(W)
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
T
δ
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150
0
1
2
3
4
5
6
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
TO-220AB/D²PAK
TO-220FPAB
ISOWATT220AB
Tamb(°C)
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
STPS10L45CT/CG/CF/CFP
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1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
90
100
IM(A)
Tc=25°C
Tc=125°C
Tc=75°C
t(s)
IM
t
δ=0.5
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB and D
2
PAK).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ
=tp/T
tp
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D
2
PAK).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
IM(A)
Tc=25°C
Tc=125°C
Tc=75°C
IM
t
δ=0.5
t(s)
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (ISOWATT220AB,
TO-220FPAB).
1E-3 1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ
=tp/T
tp
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.

STPS10L45CG-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY SCHOTTKY 45V D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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