2009-11-30Rev. 2.7
Page 3
SPP11N60S5
SPI11N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=7A
- 6 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 1460 - pF
Output capacitance C
oss
- 610 -
Reverse transfer capacitance C
rss
- 21 -
Effective output capacitance,
3)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 45 - pF
Effective output capacitance,
4)
time related
C
o(tr)
- 85 -
Turn-on delay time t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=11A, R
G
=6.8Ω
- 130 - ns
Rise time t
r
- 35 -
Turn-off delay time t
d(off)
- 150 225
Fall time t
f
- 20 30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=11A - 10.5 - nC
Gate to drain charge Q
gd
- 24 -
Gate charge total Q
g
V
DD
=350V, I
D
=11A,
V
GS
=0 to 10V
- 41.5 54
Gate plateau voltage V
(plateau)
V
DD
=350V, I
D
=11A - 8 - V
1
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
