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TP0610K-T1

P1-P3P4-P6P7-P8
Vishay Siliconix
TP0610K
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
www.vishay.com
1
P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• High-Side Switching
• Low On-Resistance: 6
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()V
GS(th)
(V) I
D
(mA)
- 60 6 at V
GS
= - 10 V - 1 to - 3 - 185
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
TO-236
(SOT-23)
Top View
2
1
S
D
G
3
Ordering Information:
TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
a
T
A
= 25 °C
I
D
- 185
mA
T
A
= 100 °C
- 115
Pulsed Drain Current
b
I
DM
- 800
Power Dissipation
a
T
A
= 25 °C
P
D
350
mW
T
A
= 100 °C
140
Maximum Junction-to-Ambient
a
R
thJA
350 °C/W
Operating Junction and Storage Temperature Range
T
J,
T
stg
- 55 to 150 °C
www.vishay.com
2
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
Vishay Siliconix
TP0610K
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ.
a
Max.
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 10 µA - 60
V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 1 - 3
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 10 µA
V
DS
= 0 V, V
GS
= ± 10 V ± 200
nA
V
DS
= 0 V, V
GS
= ± 10 V, T
J
= 85 °C ± 500
V
DS
= 0 V, V
GS
= ± 5 V ± 100
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 60 V, V
GS
= 0 V - 25
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 85 °C - 250
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V, V
DS
= - 4.5 V - 50
mA
V
GS
= - 10 V, V
DS
= - 10 V - 600
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 25 mA 10
V
GS
= - 10 V, I
D
= - 500 mA 6
V
GS
= - 10 V, I
D
= - 500 mA, T
J
=125 °C 9
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 100 mA 80 mS
Diode Forward Voltage V
SD
I
S
= - 200 mA, V
GS
= 0 V - 1.4 V
Dynamic
Total Gate Charge Q
g
V
DS
= - 30 V, V
GS
= - 15 V
I
D
- 500 mA
1.7
nCGate-Source Charge Q
gs
0.26
Gate-Drain Charge Q
gd
0.46
Input Capacitance C
iss
V
DS
= - 25 V, V
GS
= 0 V
f = 1 MHz
23
pFOutput Capacitance C
oss
10
Reverse Transfer Capacitance C
rss
5
Switching
b
Tur n - O n T i m e t
d(on)
V
DD
= - 25 V, R
L
= 150
I
D
- 200 mA, V
GEN
= - 10 V, R
g
= 10
20
ns
Turn-Off Time t
d(off)
35
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
www.vishay.com
3
Vishay Siliconix
TP0610K
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V
5 V
4 V
6 V
7 V
8 V
0
4
8
12
16
20
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)
R
DS(on)
V
GS
= 5 V
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
I
D
= 500 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
V
DS
= 48 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
02468 10
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
8
16
24
32
40
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
0.0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V at 25 mA
R
DS(on)
-
On-Resistance
(Normalized)
P1-P3P4-P6P7-P8

TP0610K-T1

Mfr. #:
Buy TP0610K-T1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-TP0610K-T1-GE3
Lifecycle:
New from this manufacturer.
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