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VS-20ETF12SLHM3

P1-P3P4-P6P7-P9
VS-20ETF12SLHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
1
Document Number: 96487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Glass passivated pellet chip junction
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
•Flexible solution for reliable AC power
rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• On-board and off-board EV / HEV battery chargers
DESCRIPTION
The VS-20ETF12SLHM3 soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
R
1200 V
V
F
at I
F
1.31 V
I
FSM
355 A
t
rr
95 ns
T
J
max. 150 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Single
Snap factor 0.6
Base
cathode
+
2
13
Anode
--
Anode
1
2
3
D
2
PAK (TO-263AB)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 20 A
V
RRM
1200 V
I
FSM
355 A
V
F
20 A, T
J
= 25 °C 1.31 V
t
rr
1 A, 100 A/μs 95 ns
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF12SLHM3 1200 1300 6
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 300
10 ms sine pulse, no voltage reapplied 355
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 450
A
2
s
10 ms sine pulse, no voltage reapplied 635
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A
2
s
VS-20ETF12SLHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
2
Document Number: 96487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.31 V
Forward slope resistance r
t
T
J
= 150 °C
11.88 m
Threshold voltage V
F(TO)
0.93 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= rated V
RRM
0.1
mA
T
J
= 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 20 A
pk
25 A/μs
25 °C
400 ns
Reverse recovery current I
rr
6.1 A
Reverse recovery charge Q
rr
1.7 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.9
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
62
Approximate weight
2g
0.07 oz.
Marking device Case style D
2
PAK (TO-263AB) 20ETF12SLH
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b
VS-20ETF12SLHM3
www.vishay.com
Vishay Semiconductors
Revision: 22-Feb-18
3
Document Number: 96487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
5
100
10 25
120
130
110
15 20
140
Conduction angle
R
thJC
(DC) = 0.9 K/W
30°
60°
90°
120°
180°
Ø
150
025
Maximum Allowable CaseTemperature (°C)
Average Forward Current (A)
15
530
110
35
120
100
10 20
130
140
R
thJC
(DC) = 0.9 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
DC
10
0
35
0
Maximum Average ForwardPower Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
Conduction angle
T
J
= 150 °C
RMS limit
180°
120°
90°
60°
30°
Ø
10
0
45
0
Maximum Average ForwardPower Loss (W)
Average Forward Current (A)
25
35
15
10 255
15
5
20
35
20
30
40
30
RMS limit
Ø
Conduction period
T
J
= 150 °C
180°
120°
90°
60°
30°
DC
350
50
1 10 100
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
150
50
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
400
Maximum non-repetitive surge current
vs. pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
P1-P3P4-P6P7-P9

VS-20ETF12SLHM3

Mfr. #:
Buy VS-20ETF12SLHM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 20A If; 1200V Vr TO-263AB (D2PAK)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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