TSM320N03CX RFG Datasheet TSM320N03CX RFG | P1-P3

TSM320N03CX

Taiwan Semiconductor

1 Version: B1607

N-Channel Power MOSFET

30V, 5.5A, 32mΩ

FEATURES

● Low R

DS(ON)

to minimize conductive losses

● Low gate charge for fast power switching

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Battery Power Management

● ORing FET/Load Switch

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

30

V

R

DS(on)

(max)

V

GS

= 4.5V

32

mΩ

V

GS

= 2.5V

40

Q

g

8.9

nC

SOT-23

Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

±12

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

5.5

A

T

A

= 25°C

4

Pulsed Drain Current

I

DM

22

A

Total Power Dissipation

T

C

= 25°C

P

D

1.8

W

T

C

= 125°C

0.4

Total Power Dissipation

T

A

= 25°C

P

D

1

W

T

A

= 125°C

0.2

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

R

ӨJC

70

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

124

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design.

TSM320N03CX

Taiwan Semiconductor

2 Version: B1607

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

30

--

V

Gate Threshold Voltage

V

GS

= V

DS

, I

D

= 250µA

V

GS(TH)

0.4

0.75

0.9

V

Gate-Source Leakage Current

V

GS

= ±12V, V

DS

= 0V

I

GSS

--

±100

nA

Drain-Source Leakage Current

V

GS

= 0V, V

DS

= 30V

I

DSS

--

1

µA

V

GS

= 0V, V

DS

= 30V

T

J

= 125°C

--

100

Drain-Source On-State Resistance

(Note 2)

V

GS

= 4.5V, I

D

= 4A

R

DS(on)

--

27

32

mΩ

V

GS

= 2.5V, I

D

= 4A

--

32

40

Forward Transconductance

(Note 2)

V

DS

= 5V, I

D

= 4A

g

fs

--

9.5

--

S

Dynamic

(Note 3)

Total Gate Charge

V

GS

= 4.5V, V

DS

= 15V,

I

D

= 4A

Q

g

--

8.9

--

nC

Total Gate Charge

V

GS

= 2.5V, V

DS

= 15V,

I

D

= 4A

Q

g

--

5.1

--

Gate-Source Charge

Q

gs

--

1.5

--

Gate-Drain Charge

Q

gd

--

2

--

Input Capacitance

V

GS

= 0V, V

DS

= 15V

f = 1.0MHz

C

iss

--

792

--

pF

Output Capacitance

C

oss

--

53

--

Reverse Transfer Capacitance

C

rss

--

21

--

Gate Resistance

f = 1.0MHz, open drain

R

g

--

1

--

Ω

Switching

(Note 3)

Turn-On Delay Time

V

GS

= 10V, V

DS

= 15V,

I

D

= 4A, R

G

= 2Ω,

t

d(on)

--

5.8

--

ns

Turn-On Rise Time

t

r

--

32

--

Turn-Off Delay Time

t

d(off)

--

19

--

Turn-Off Fall Time

t

f

--

28

--

Source-Drain Diode

Forward Voltage

(Note 2)

V

GS

= 0V, I

S

= 4A

V

SD

--

1

V

Reverse Recovery Time

I

S

= 4A ,

dI/dt = 100A/μs

t

rr

--

8

--

ns

Reverse Recovery Charge

Q

rr

--

3.3

--

nC

Notes:

1. Silicon limited current only.

2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

3. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM320N03CX RFG

SOT-23

3,000pcs / 7” Reel

TSM320N03CX

Taiwan Semiconductor

3 Version: B1607

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

I

D

, Drain Current (A)

V

DS

, Drain to Source Voltage (V)

R

DS(ON)

, Drain-Source On-Resistance (Ω)

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-Source On-Resistance (Ω)

V

GS

, Gate to Source Voltage (V)

0

2

4

6

8

10

0 1 2 3 4 5

25℃

-55℃

150℃

0

2

4

6

8

10

0 1 2 3 4 5

V

GS

=4.5V

V

GS

=4V

V

GS

=3.5V

V

GS

=3V

V

GS

=2.5V

V

GS

=2V

V

GS

=1.3V

V

GS

=1.4V

V

GS

=1.6V

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0 2 4 6 8 10

V

GS

=4.5V

V

GS

=2.5V

0.01

0.02

0.03

0.04

0.05

0.06

1.5 2 2.5 3 3.5 4 4.5

I

D

=4A

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=4.5V

I

D

=4A

0

0.9

1.8

2.7

3.6

4.5

0 2 4 6 8 10

V

DS

=15V

I

D

=4A

TSM320N03CX RFG

TSM320N03CX RFG

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