IXTT69N30P Datasheet IXTQ69N30P, IXTT69N30P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 300 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 300 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25° C69A

I

DM

T

C

= 25° C, pulse width limited by T

JM

200 A

I

AR

T

C

= 25° C69A

E

AR

T

C

= 25° C50mJ

E

AS

T

C

= 25° C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 500 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-3P) 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g

TO-268 5.0 g

G = Gate D = Drain

S = Source TAB = Drain

DS99078E(12/05)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 300 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 2.5 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

49 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

PolarHT

TM

Power MOSFET

IXTQ69N30P V

DSS

= 300 V

IXTT69N30P I

D25

= 69 A

R

DS(on)

≤≤

≤ 49 m

ΩΩ

Ω

N-Channel Enhancement Mode

Avalanche Rated

Features

l

International standard packages

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-3P (IXTQ)

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 69N30P

IXTT 69N30P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 30 48 S

C

iss

4960 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 760 pF

C

rss

190 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

25 ns

t

d(off)

R

G

= 4 Ω (External) 75 ns

t

f

27 ns

Q

g(on)

156 180 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

32 nC

Q

gd

79 nC

R

thJC

0.25° C/W

R

thCS

(TO-3P) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 69 A

I

SM

Repetitive 200 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

T

rr

I

F

= 25 A, -di/dt = 100 A/µs 250 ns

Q

RM

V

R

= 100 V, V

GS

= 0V 3.0 µC

TO-268 (IXTT) Outline

TO-3P (IXTQ) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 101214161820

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5V

6V

7V

8V

Fig. 3. Output Characteris tics

@ 125 Deg. C

0

10

20

30

40

50

60

70

0123 456 78

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

10

20

30

40

50

60

70

00.511.522.533.54

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D25

V

alue vs.

Junction Temperature

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S (on)

- Normalize

d

I

D

= 69A

I

D

= 34.5A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig . 5. R

DS (on)

Normalized to I

D25

Value vs. I

D

0.6

1

1.4

1.8

2.2

2.6

3

3.4

3.8

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

D S (on)

- Normalize

d

T

J

= 125ºC

T

J

= 25ºC

V

GS

= 10V

IXTQ 69N30P

IXTT 69N30P

IXTT69N30P

IXTT69N30P

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