OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BCW68GLT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 8
1 Publication Order Number:
BCW68GLT1/D
BCW68GL
General Purpose Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−45 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−800 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
DG = Specific Device Code
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
BCW68GLT1G,
NSVBCW68GLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
DG MG
G
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
BCW68GLT3G SOT−23
(Pb−Free)
10000 / Tape &
Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
www.onsemi.com
BCW68GL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−45 − − Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, V
EB
= 0)
V
(BR)CES
−60 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − − Vdc
Collector Cutoff Current
(V
CE
= −45 Vdc, I
E
= 0)
(V
CE
= −45 Vdc, I
B
= 0, T
A
= 150°C)
I
CES
−
−
−
−
−20
−10
nAdc
mAdc
Emitter Cutoff Current (V
EB
= −4.0 Vdc, I
C
= 0) I
EBO
− − −20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −300 mAdc, V
CE
= −1.0 Vdc)
h
FE
120
160
60
−
−
−
400
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
− − −0.7 Vdc
Base−Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
− − −2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −20 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− − 18 pF
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− − 105 pF
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
N
F
− − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BCW68GL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1 V
CE
= 5 V
150°C
−55°C
25°C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001010.1
10
100
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
1000
100
P1-P3P4-P5

BCW68GLT3G

Mfr. #:
Buy BCW68GLT3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT GENRL TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet