©2004 Fairchild Semiconductor Corporation
September 2004
RMPA2059 Rev. D
RMPA2059
RMPA2059
3V WCDMA PowerEdge™ Power Amplifier Module
General Description
The RMPA2059 power amplifier module (PAM) is designed
for WCDMA applications. The 2 stage PAM is internally
matched to 50
Ω
to minimize the use of external
components and features a low-power mode to reduce
standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) process.
Features
• Single positive-supply operation and low power and
shutdown modes
• 40% CDMA efficiency at +27dBm average output power
• Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry
standard pinout
• Internally matched to 50
Ω
and DC blocked RF input/
output
• Meets WCDMA performance requirements
Absolute Ratings
1
Note:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Module Block Diagram
Figure 1. RMPA2059 WCDMA Power Amplifier Module Functional Block Diagram
Symbol Parameter Min Max Units
Vcc1, Vcc2 Supply Voltages 0 5.0 V
Vref Reference Voltage 2.7 5.0 V
Vmode Power Control Voltage 0 3.0 V
Pin RF Input Power - +5 dBm
T
STG
Storage Temperature -55 +150 °C
INPUT
MATCHING
NETWORK
OUTPUT
MATCHING
NETWORK
COLLECTOR
BIAS
INTERSTAGE
MATCH
BIAS
CONTROL
INPUT
STAGE
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
OUTPUT
STAGE
MMIC
PA MODULE
VCC=3.4V (nom)
VREF=3.0V (nom)
1920-1980 MHz
50 Ohms I/O
Vmode (4)
VREF
(5)
REF IN
(2)
REF OUT
(8)
VCC1, VCC2
(1, 10)
GND
(3, 6, 7, 9, 11)
Device
