Advanced Technical Information
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MPK 95-06 DA
IXYS reserves the right to change limits, test conditions and dimensions
508
Symbol Conditions Maximum Ratings
I
FRMS
200 A
I
FAV
① T
C
= 110°C; sine 180° 95 A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 1200 A
t = 8.3 ms (60 Hz), sine 1280 A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine 1070 A
t = 8.3 ms (60 Hz), sine 1140 A
I
2
t T
VJ
= 45°C; t = 10 ms (50 Hz), sine 7200 A
2
s
t = 8.3 ms (60 Hz), sine 6900 A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine 5700 A
2
s
t = 8.3 ms (60 Hz), sine 5500 A
2
s
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
P
tot
T
C
= 25°C 215 W
V
ISOL
50/60 Hz, RMS; t = 1 s 3600 V~
M
d
Mounting/Terminal torque (M5) 2.5-4 Nm
d
S
Creep distance on surface 12.7 mm
d
A
Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
Weight 90 g
Fast Recovery
Epitaxial Diode
(FRED) Module
Dimensions in mm (1 mm = 0.0394")
Features
• International standard package
with DCB ceramic base plate
• Planar passivated chips
• Short recovery time
• Low switching losses
• Soft recovery behaviour
• Isolation voltage 3600 V~
Applications
• Antiparallel diode for high frequency
switching devices
• Free wheeling diode in converters
and motor control circuits
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
123
V
RRM
= 600 V
I
FAV
= 95 A
t
rr
= 35 ns
V
RSM
V
RRM
Type
VV
600 600 MPK 95-06 DA
① I
FAV
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747 and per diode unless otherwise specified
TO-240 AA
1
2
3
Symbol Conditions Characteristic Values (per diode)
typ. max.
I
R
V
R
= V
RRM
T
VJ
= 25°C 1.3 mA
T
VJ
= 125°C 5 mA
V
F
I
F
= 50 A; T
VJ
= 125°C 1.22 V
T
VJ
= 25°C 1.73 V
I
F
= 100 A; T
VJ
= 125°C 1.40 V
T
VJ
= 25°C 1.89 V
V
T0
For power-loss calculations only 0.98 V
r
T
T
VJ
= 150°C 2.3 mΩ
R
thJC
DC current 0.575 K/W
R
thCH
DC current 0.1 K/W
t
rr
I
F
= 1 A; V
R
= 30 V; T
VJ
= 25°C 35 ns
-di/dt = 300A/µs
I
RM
I
F
= 130 A; V
R
= 100 V; T
VJ
= 25°C 4 A
-di/dt = 100A/µs T
VJ
= 100°C 5.5 6.8 A
