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SI5856DC-T1-E3

P1-P3P4-P6P7-P7
Vishay Siliconix
Si5856DC
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1
N-Channel 1.8 V (G-S) MOSFET with Schottky Diode
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Ultra Low R
DS(on)
• Ultra Low V
F
Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Buck Rectifier Switch, Buck-Boost
• Synchronous Rectifier or Load
• Switch for Portable Devices
MOSFET PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.040 at V
GS
= 4.5 V
5.9
0.045 at V
GS
= 2.5 V
5.6
0.052 at V
GS
= 1.8 V
5.2
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
20 0.375 V at 1.0 A 1.0
JD XXX
Bottom View
1206-8 ChipFET
®
A
A
S
G
K
K
D
D
1
Marking Code
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5856DC-T1-E3 (Lead (Pb)-free)
Si5856DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
K
A
N-Channel MOSFET
G
D
S
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage (MOSFET and Schottky)
V
DS
20
VReverse Voltage (Schottky)
V
KA
20
Gate-Source Voltage (MOSFET)
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C) (MOSFET)
a
T
A
= 25 °C
I
D
5.9 4.4
A
T
A
= 85 °C
4.2 3.1
Pulsed Drain Current (MOSFET)
I
DM
20
Continuous Source Current (MOSFET Diode Conduction)
a
I
S
1.8 0.9
Average Forward Current (Schottky)
I
F
1.0
Pulsed Forward Current (Schottky)
I
FM
7
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 °C
P
D
2.1 1.1
W
T
A
= 85 °C
1.1 0.6
Maximum Power Dissipation (Schottky)
a
T
A
= 25 °C
1.9 1.1
T
A
= 85 °C
1.0 0.56
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
www.vishay.com
2
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
Vishay Siliconix
Si5856DC
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
Junction-to-Ambient
a
t ≤ 5 s
MOSFET
R
thJA
50 60
°C/W
Schottky 54 65
Steady State
MOSFET 90 110
Schottky 95 115
Junction-to-Foot Steady State
MOSFET
R
thJF
30 40
Schottky 30 40
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.4 1.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 4.4 A
0.032 0.040
Ω
V
GS
= 2.5 V, I
D
= 4.1 A
0.036 0.045
V
GS
= 1.8 V, I
D
= 1.9 A
0.042 0.052
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.4 A
22 S
Diode Forward Voltage
a
V
SD
I
S
= 1.0 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.4 A
57.5
nCGate-Source Charge
Q
gs
0.85
Gate-Drain Charge
Q
gd
1
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
g
= 6 Ω
20 30
ns
Rise Time
t
r
36 55
Turn-Off Delay Time
t
d(off)
30 45
Fall Time
t
f
12 20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 0.9 A, dI/dt = 100 A/µs
45 90
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.34 0.375
V
I
F
= 1.0 A, T
J
= 125 °C
0.255 0.290
Maximum Reverse Leakage Current
I
rm
V
r
= 20 V
0.05 0.500
mA
V
r
= 20 V, T
J
= 85 °C
220
V
r
= 20 V, T
J
= 125 °C
10 100
Junction Capacitance
C
T
V
r
= 10 V
90 pF
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
3
Vishay Siliconix
Si5856DC
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
012345
V
GS
= 5 V thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1 V
1.5 V
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
048121620
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 4.5 V
V
GS
= 2.5 V
0
1
2
3
4
5
0123456
V
DS
= 10 V
I
D
= 4.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.4 0.8 1.2 1.6 2.0
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
100
200
300
400
500
600
700
800
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
R
DS(on)
- On-Resistance
(Normalized)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4.4 A
T
J
- Junction Temperature (°C)
P1-P3P4-P6P7-P7

SI5856DC-T1-E3

Mfr. #:
Buy SI5856DC-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 20V 4.4A 1206-8
Lifecycle:
New from this manufacturer.
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