OMO ElectronicOMO Electronic
Expand menu
0 Cart

ADRF5025BCCZN-R7

P1-P3P4-P6P7-P9P10-P12P13-P13
Silicon SPDT Switch, Reflective,
9 kHz to 44 GHz
Data Sheet
ADRF5025
Rev. A Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Ultrawideband frequency range: 9 kHz to 44 GHz
Reflective design
Low insertion loss with impedance match
0.9 dB typical to 18 GHz
1.4 dB typical to 40 GHz
1.6 dB typical to 44 GHz
Low insertion loss without impedance match
0.9 dB typical to 18 GHz
1.7 dB typical to 40 GHz
2.2 dB typical to 44 GHz
High input linearity
P1dB: 27.5 dBm typical
IP3: 50 dBm typical
High RF input power handling
Through path: 27 dBm
Hot switching: 27 dBm
No low frequency spurious
RF settling time (50% V
CTL
to 0.1 dB final RF output): 3.4 μs
12-terminal, 2.25 mm × 2.25 mm LGA package
Pin compatible with the ADRF5024 fast switching version
APPLICATIONS
Industrial scanners
Test and instrumentation
Cellular infrastructure: 5G mmWave
Military radios, radars, electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
16533-001
ADRF5025
RF2
VSS
CTRL
VDD
RF1
RFC
DRIVER
Figure 1.
GENERAL DESCRIPTION
The ADRF5025 is a reflective single-pole double-throw (SPDT)
switch, manufactured in silicon process.
This switch operates from 9 kHz to 44 GHz with better than
1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025
has an radio frequency (RF) input power handling capability of
27 dBm for both the through path and hot switching.
The ADRF5025 draws a low current of 14 μA on the positive
supply of +3.3 V and 120 μA on negative supply of −3.3 V. The
device employs complementary metal-oxide semiconductor
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-
compatible controls.
The ADRF5025 is pin compatible with the ADRF5024, low
frequency cutoff version, which operates from 100 MHz to
44 GHz.
The ADRF5025 RF ports are designed to match a characteristic
impedance of 50 Ω. For ultrawideband products, impedance
matching on the RF transmission lines can further optimize
high frequency insertion loss and return loss characteristics.
Refer to the Electrical Specifications section, Typical
Performance Characteristics section, and Applications
Information section for more details.
The ADRF5025 comes in a 2.25 mm × 2.25 mm, 12-terminal,
RoHS-compliant, land grid array (LGA) package and can
operate from −40°C to +105°C.
ADRF5025 Data Sheet
Rev. A | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
Power Derating Curves ................................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Insertion Loss, Return Loss, and Isolation ................................7
Input Power Compression and Third-Order Intercept ............8
Theory of Operation .........................................................................9
Applications Information .............................................................. 10
Evaluation Board ........................................................................ 10
Probe Matrix Board ................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
5/2018—Rev. 0 to Rev. A
Change to Input Linearity Parameter, Table 1 .............................. 4
Change to RF Input Power Parameter, Table 2 ............................. 5
Updated Outline Dimensions ....................................................... 13
Changes to Ordering Guide .......................................................... 13
5/2018—Revision 0: Initial Version
Data Sheet ADRF5025
Rev. A | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
VDD = 3.3 V, VSS = −3.3 V, V
CTL
= 0 V or 3.3 V, and case temperature (T
CASE
) = 25°C for a 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE f 0.009 44,000 MHz
INSERTION LOSS
Between RFC and RF1/RF2 (On)
With Impedance Match See Figure 24
9 kHz to 18 GHz 0.9 dB
18 GHz to 26 GHz 1.2 dB
26 GHz to 35 GHz 1.3 dB
35 GHz to 40 GHz 1.4 dB
40 GHz to 44 GHz 1.6 dB
Without Impedance Match See Figure 25
9 kHz to 18 GHz 0.9 dB
18 GHz to 26 GHz
1.0
dB
26 GHz to 35 GHz 1.4 dB
35 GHz to 40 GHz 1.7 dB
40 GHz to 44 GHz 2.2 dB
RETURN LOSS
RFC and RF1/RF2 (On)
With Impedance Match See Figure 24
9 kHz to 18 GHz 17 dB
18 GHz to 26 GHz 13 dB
26 GHz to 35 GHz 12 dB
35 GHz to 40 GHz 18 dB
40 GHz to 44 GHz 18 dB
Without Impedance Match See Figure 25
9 kHz to 18 GHz 22 dB
18 GHz to 26 GHz
20
dB
26 GHz to 35 GHz 13 dB
35 GHz to 40 GHz 11 dB
40 GHz to 44 GHz 10 dB
ISOLATION
Between RFC and RF1/RF2 9 kHz to 18 GHz 42 dB
18 GHz to 26 GHz 41 dB
26 GHz to 35 GHz 39 dB
35 GHz to 40 GHz 36 dB
40 GHz to 44 GHz 35 dB
Between RF1 and RF2 9 kHz to 18 GHz 48 dB
18 GHz to 26 GHz 46 dB
26 GHz to 35 GHz 44 dB
35 GHz to 40 GHz 43 dB
40 GHz to 44 GHz
40
dB
SWITCHING CHARACTERISTICS
Rise and Fall Time t
RISE
, t
FAL L
10% to 90% of RF output 0.6 µs
On and Off Time t
ON
, t
OFF
50% V
CTL
to 90% of RF output 1.7 µs
RF Settling Time
0.1 dB 50% V
CTL
to 0.1 dB of final RF output 3.4 µs
0.05 dB 50% V
CTL
to 0.05 dB of final RF output 4.2 µs
P1-P3P4-P6P7-P9P10-P12P13-P13

ADRF5025BCCZN-R7

Mfr. #:
Buy ADRF5025BCCZN-R7
Manufacturer:
Analog Devices Inc.
Description:
RF Switch ICs 40 GHz, Low Loss, Reflective, low cut oh
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet