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UH2DHE3/5BT

P1-P3P4-P5
UH2B, UH2C, UH2D
www.vishay.com
Vishay General Semiconductor
Revision: 22-Mar-12
1
Document Number: 89108
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
100 V, 150 V, 200 V
I
FSM
50 A
t
rr
25 ns
V
F
at I
F
= 2.0 A 0.69 V
T
J
max. 175 °C
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH2B UH2C UH2D UNIT
Device marking code HB HC HD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current (fig. 1)
(1)
I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
UH2B, UH2C, UH2D
www.vishay.com
Vishay General Semiconductor
Revision: 22-Mar-12
2
Document Number: 89108
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
Note
(1)
AEC-Q 101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.0 A
T
A
= 25 °C
V
F
(1)
0.79 -
V
I
F
= 2.0 A 0.87 1.05
I
F
= 1.0 A
T
A
= 125 °C
0.62 -
I
F
= 2.0 A 0.69 0.90
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-2.0
μA
T
A
= 125 °C 10 50
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
l
rr
= 0.25 A
T
A
= 25 °C t
rr
15 25
ns
Typical reverse recovery time
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, l
rr
= 0.1 I
RM
20 35
Typical softness factor (t
b
/t
a
)
I
F
= 2.0 A, dI/dt = 200 A/μs,
V
R
= 200 V
T
A
= 125 °C
S0.3 -
Typical reverse recovery current I
RM
5.0 6.0 A
Typical stored charge Q
rr
55 - nC
Typical junction capacitance 4.0 V, 1 MHz C
J
42 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH2B UH2C UH2D UNIT
Typical thermal resistance
R
JA
(1)
105
°C/W
R
JM
(1)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
UH2D-E3/52T 0.100 52T 750 7" diameter plastic tape and reel
UH2D-E3/5BT 0.100 5BT 3200 13" diameter plastic tape and reel
UH2DHE3/52T
(1)
0.100 52T 750 7" diameter plastic tape and reel
UH2DHE3/5BT
(1)
0.100 5BT 3200 13" diameter plastic tape and reel
UH2B, UH2C, UH2D
www.vishay.com
Vishay General Semiconductor
Revision: 22-Mar-12
3
Document Number: 89108
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
2.4
95 105 115 125 135 145 155 175
Average Forward Rectified Current (A)
T
M
- Mount Temperature (°C)
Resistive or Inductive Load
2.0
1.6
1.2
0.8
0.4
165
T
M
Measured
at Mount of Terminal
0
0.4
0.8
1.2
1.6
2.0
0 2.40.4
Average Power Loss (W)
Average Forward Current (A)
2.01.61.20.8
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
0.2
0.6
1.0
1.4
1.8
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
T
A
= 175 °C
0.1
1
10
100
1000
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
20 40 60 80 100
0.01
Instantaneous Reverse Current (µA)
10 30 50 70 90
T
A
= 175 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.001 101 100
100
1000
1
10
0.1
Junction to Ambient
0.01
P1-P3P4-P5

UH2DHE3/5BT

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Manufacturer:
Vishay
Description:
Rectifiers 2.0A 200 Volt 25ns 50 Amp IFSM
Lifecycle:
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