POWER DISCRETES
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1N5807US/1N5809US/1N5811US
Superfast Recovery Diodes
Surface Mount (US)
Features
Revision: May 26, 2006
Quick reference data
V
R
50 -150 V
I
F
1N5807US to 1N5811US = 6A
t
rr
1N5807US to 1N5811US = 30nS
I
R
1N5807US to 1N5811US = 5µA
u Very low reverse recovery time
u Hermetically sealed non-cavity construction
u Soft, non-snap, off recovery characteristics
u Very low forward voltage drop
Electrical Specifications
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Symbol 1N5807US 1N5809US 1N5811US Units
Working Reverse Voltage V
RWM
50 100 150 V
Repetitive Reverse Voltage V
RRM
50 100 150 V
Average Forward Current
(@ 75°C lead length = 0.375')
I
F(AV)
6.0 A
Repetitive Surge Current
(@ 55°C in free air lead length = 0.375')
I
FRM
25 A
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & T
JMAX
)
I
FSM
125 A
Storage Temperature Range T
STG
-65 to +175 °C
Average Forward Current Max
(pcb mounted: T
A
= 55°C)
Sine wave
Square wave (d = 0.5)
I
F(AV)
I
F(AV)
1.7
1.8
A
I
2
t for fusing (t = 8.3mS) max I
2
t 32 A
2
S
Forward Voltage Drop max
@ T
J
= 25°C
V
F
0.875 @ 4A V
Reverse Current max
@ V
WRM
, T
J
= 25°C
@ V
WRM
, T
J
= 100°C
I
R
I
R
5.0
150
µA
Reverse Recovery Time max
(1.0A I
F
to 1.0A I
RM
recover to 0.25A I
RM(REC)
) trr 30 nS
Junction Capacitance typ
@ V
R
= 5V f = 1MHz
C
J
60 pF
Thermal Resistance to end cap R
θJEC
6.5 °C/W
Description
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX , JANTXV
and JANS versions.
