IRFZ46NS/IRFZ46NL
2 www.irf.com
Starting T
J
= 25°C, L = 389µH
R
G
= 25Ω, I
AS
= 28A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤ 28A, di/dt ≤ 220A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 28A, V
GS
= 0V
t
rr
Reverse Recovery Time 67 101 ns T
J
= 25°C, I
F
= 28A
Q
rr
Reverse Recovery Charge 208 312 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.057 V/°C Reference to 25°C, I
D
=1mA
R
DS(on)
Static Drain-to-Source On-Resistance .0165 Ω V
GS
=10V, I
D
= 28A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 19 S V
DS
= 25V, I
D
= 28A
25
µA
V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 72 I
D
= 28A
Q
gs
Gate-to-Source Charge 11 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 26 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 14 V
DD
= 28V
t
r
Rise Time 76 I
D
= 28A
t
d(off)
Turn-Off Delay Time 52 R
G
= 12Ω
t
f
Fall Time 57 R
D
= 0.98Ω, See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance 1696 V
GS
= 0V
C
oss
Output Capacitance 407 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy 583152 I
AS
= 28A, L = 389mH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
53
180
