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IXGR6N170A
P1-P3
P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR6N170A
Fig. 7. T
rans
conduct
ance
0
1
2
3
4
5
0246
8
1
0
1
2
I
C
- Am
p
eres
g
f s
-
Sieme
ns
T
J
= - 40º
C
125ºC
25ºC
Fig. 8. G
at
e Charge
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
Q
G
-
N
a
no
C
o
ulo
mbs
V
GE
- Vol
t
s
V
CE
= 850V
I
C
= 6A
I
G
= 1m
A
Fi
g.
9.
Rever
se-B
ias Safe O
per
atin
g
Area
0
2
4
6
8
10
12
200
400
600
800
1000
1200
1400
1600
1800
V
CE
- Vol
ts
I
C
- Ampere
s
T
J
= 125ºC
R
G
= 33
Ω
dv / dt <
10V / ns
Fig. 10
. Capa
cita
nce
1
10
100
1,000
0
5
10
15
20
25
30
35
40
V
CE
- Vol
ts
Capaci
tance -
Pi
coFarads
f
= 1 MH
z
C
ies
C
oes
C
res
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Puls
e
W
i
dth
-
Se
c
o
nds
Z
(th)JC
-
ºC
/ W
Fi
g.
11.
M
axi
m
um
T
ran
si
ent T
her
m
al I
m
ped
an
ce
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_6N170A(2N)8-12-10-A
IXGR6N170A
Fig. 12
. Inductiv
e S
wit
ching Ene
rgy Los
s
vs. Gate Resistance
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
30
40
50
60
70
80
90
100
110
120
R
G
- Oh
m
s
E
o f
f
- M
illiJ
ou
le
s
0
0.5
1
1.5
2
2.5
3
3.5
E
on
-
M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 125ºC ,
V
GE
= 15
V
V
CE
= 8
50
V
I
C
= 6A
I
C
= 12
A
Fig. 1
3. In
duct
ive
Sw
it
ching E
nergy
Loss
vs
. Collect
or Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
6
7
8
9
10
11
12
I
C
- Am
p
eres
E
o f f
-
M
illiJ
o
u
le
s
0
0.5
1
1.5
2
2.5
3
3.5
E
on
- M
illiJ
o
ule
s
E
off
E
on
- - - -
R
G
= 33
Ω
,
V
GE
= 15
V
V
CE
= 850V
T
J
= 125ºC,
25ºC
Fig. 14
. Inductiv
e S
wit
ching Ene
rgy Loss
vs. Ju
n
cti
on
T
em
p
er
atur
e
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25
35
45
55
65
75
85
95
105
115
12
5
T
J
-
D
e
gr
e
e
s
C
e
nti
gr
a
de
E
o f f
- M
illiJ
o
ule
s
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
E
on
- M
illiJ
o
ule
s
E
off
E
on
- - - -
R
G
= 33
Ω
,
V
GE
= 15V
V
CE
= 8
50
V
I
C
= 6A
I
C
= 12A
P1-P3
P4-P5
IXGR6N170A
Mfr. #:
Buy IXGR6N170A
Manufacturer:
Littelfuse
Description:
IGBT Modules High Voltage IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
Payment:
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