Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
T1500N12TOFVTXPSA1
P1-P3
P4-P6
P7-P9
P10-P10
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1500N
IFBIP D AEC / 2008-09-15, H.Sandmann
A
43/08
7/10
Seite/page
Tc
DC
180
°
1
20°
90°
60°
θ
=
30°
0
10
0
0
20
0
0
30
0
0
40
0
0
50
0
0
60
0
0
0
500
100
0
15
00
2
000
2500
3000
350
0
40
00
I
TA
V
[A]
P
TA
V
[W
]
0°
0
180°
Durchlassverlustleistung /
On-state power loss
P
TA
V
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
DC
18
0°
120°
90°
60°
θ
= 3
0
°
20
40
60
80
100
120
140
0
5
00
10
00
150
0
2000
2
500
30
00
35
00
4000
I
TAV
[A
]
T
C
[°
C]
0°
0
18
0°
Höchstzulässige Geh
äusetemperatur / Maximum allow
able case temperature T
C
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Beidseitige Kühlung / T
wo-sided cooling
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1500N
IFBIP D AEC / 2008-09-15, H.Sandmann
A
43/08
8/10
Seite/page
Steuerkennlinie
Zündverzug
0,1
1
10
100
10
100
1000
10000
i
G
[mA]
v
G
[V
]
T
vj
m ax
=
+12
5
°C
T
vj
=
-40 °
C
T
vj
=
+25°C
a
b
c
Steuercharakteristik v
G
= f (i
G
) mit Zündbereichen für V
D
= 12 V
Gate characteristic v
G
= f (i
G
) with triggering area for V
D
= 12 V
Höchstzulässige Spitzens
teuerverlustleistung / Maximum rat
ed peak gate power dissipation P
GM
= f (t
g
) :
a - 20W / 10ms b - 40W / 1ms c - 60W / 0,5ms
100
1000
10000
1
10
100
-di/dt [A/µs]
Q
r
[µAs
]
i
TM
=2000A
100A
200A
500A
1000A
Sperrverzögerungsla
dung / Recovered charge Q
r
= f(di/dt)
T
vj
= T
vjmax
, v
R
≤
0,5 V
RRM
, V
RM
= 0,8 V
RRM
Parameter: Durchlassstro
m / On-state current i
TM
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T1500N
IFBIP D AEC / 2008-09-15, H.Sandmann
A
43/08
9/10
Seite/page
0-
50
V
0,3
3 V
R
RM
0,
67 V
R
RM
0
10
20
30
40
1234
56789
1
0
1
1
1
2
1
3
1
4
1
5
1
6
1
7
Anza
hl
Puls
e
be
i
5
0
Hz Sinus
H
a
l
bwel
l
e
n
Nu
m
be
r of
p
u
lse
s f
or 5
0H
z
sin
u
s
o
i
d
al h
al
f
w
aves
I
T(
OV
)M
[k
A
]
Typische Abhängi
gkeit des Grenzstromes I
T(OV)M
von der Anza
hl für eine Folge v
on Sinus
Halbwellen bei 50H
z. Parameter: Rück
wärtsspannung V
RM
Typical depende
ncy of maximum ov
erload on-state current I
T(OV)M
as a number of a s
equence of
sinusoidal half waves at 50Hz. Parameter:
peak reverse voltage V
RM
I
T(OV)M
= f (pulses
, V
RM
) ; T
vj
= T
vjmax
P1-P3
P4-P6
P7-P9
P10-P10
T1500N12TOFVTXPSA1
Mfr. #:
Buy T1500N12TOFVTXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 1800V 3500A DO200AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
T1500N08TOFVTXPSA1
T1500N14TOFVTXPSA1
T1500N16TOFVTXPSA1
T1500N18TOFVTXPSA1
T1500N12TOFVTXPSA1