2STN1550

P1-P3 P4-P6 P7-P8

Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

November 2008 Rev 2 1/8

8

2STF1550

2STN1550

Low voltage high performance NPN power transistors

Features

■ Very low collector-emitter saturation voltage

■ High current gain characteristic

■ Fast switching speed

■ Surface mounting devices in medium power

SOT-89 and SOT-223 packages

Applications

■ Emergency lighting

■ LED

■ Motherboard and hard disk drive

■ Mobile equipment

■ Battery charger

■ Voltage regulation

Description

The 2STF1550 and 2STN1550 are NPN

transistors manufactured using new “PB-HCD”

(Power bipolar high current density) technology.

The resulting transistor shows exceptional high

gain performances coupled with very low

saturation voltage.

Figure 1. Internal schematic diagram

SOT-89

1

2

4

3

SOT-223

4

3

2

1

Table 1. Device summary

Order codes Marking Package Packaging

2STF1550 1550 SOT-89

Tape and reel

2STN1550 N1550 SOT-223

www.st.com

Electrical ratings 2STF1550 - 2STN1550

2/8

1 Electrical ratings

Table 2. Absolute maximum rating

Symbol Parameter

Value

Unit2STF1550 2STN1550

SOT-89 SOT-223

V

CES

Collector-emitter voltage (V

CE

= 0) 50 V

V

CEO

Collector-emitter voltage (I

B

= 0) 50 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 5 A

I

CM

Collector peak current (t

P

< 5 ms) 10 A

I

B

Base current 1 A

P

TOT

Total dissipation at T

amb

= 25 °C 1.4 1.6 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter SOT-89 SOT-223 Unit

R

thj-amb

(1)

1. Device mounted on PCB area of 1 cm

2

Thermal resistance junction-amb __max 89 78 °C/W

2STF1550 - 2STN1550 Electrical characteristics

3/8

2 Electrical characteristics

(T

case

= 25 °C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

= 0)

V

CB

= 50 V 0.1 μA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 4 V 0.1 μA

V

(BR)CBO

Collector-base

breakdown voltage

(I

E

= 0)

I

C

= 100 μA50 V

V

(BR)CEO

(1)

1. Pulsed duration = 300 μs, duty cycle ≤1.5%

Collector-emitter

breakdown voltage

(I

B

= 0)

I

C

= 10 mA 50 V

V

(BR)EBO

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 100 μA5 V

h

FE

(1)

DC current gain

I

C

= 0.5 A V

CE

= 2 V

I

C

= 2 A V

CE

= 2 V

I

C

= 3 A V

CE

= 2 V

I

C

= 5 A V

CE

= 5 V

135

100

250

95

400

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 3 A I

B

= 300 mA 0.26 0.45 V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 3 A I

B

= 300 mA 1 1.2 V

C

CBO

Collector-base

capacitance (I

E

= 0)

V

CB

= 10 V, f = 1 MHz 20 pF

t

on

t

off

Resistive load

Turn-on time

Turn-off time

I

C

= 1.5 A V

CC

= 10 V

I

B1

= -I

B2

= 150 mA

90

700

ns

ns

P1-P3 P4-P6 P7-P8

2STN1550

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT IGBT & Power Bipolar

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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