1999 May 25 4
NXP Semiconductors Product data sheet
General purpose diodes BAV20; BAV21
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 100 mA − 1.0 V
I
F
= 200 mA − 1.25 V
I
R
reverse current see Fig.5
V
R
= V
Rmax
− 100 nA
V
R
= V
Rmax
; T
j
= 150 °C − 100 μA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 − 5 pF
t
rr
reverse recovery time when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100 Ω; measured
at I
R
= 3 mA; see Fig.8
− 50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
R
th j-a
thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
