IPB80N06S2L07ATMA3

IPB80N06S2L-07
IPP80N06S2L-07
13 Typical avalanche energy 14 Typ. gate charge
E
AS
= f(T
j
) V
GS
= f(Q
gate
); I
D
= 80 A pulsed
parameter: I
D
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
= f(T
j
); I
D
= 1 mA
50 A
60 A
80 A
0
100
200
300
400
500
600
700
800
0 50 100 150 200
T
j
[°C]
E
AS
[mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
11 V
44 V
0
2
4
6
8
10
12
0 20 40 60 80 100 120
Q
gate
[nC]
V
GS
[V]
46
48
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
Rev. 1.0 page 7 2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices, please contact your
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Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2005-12-27

IPB80N06S2L07ATMA3

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
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