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Document Number: 73209
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD08P06-155L
New Product
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ
a
Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= - 250 µA
- 60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.0 - 2.0 - 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V, V
GS
= 0 V
- 1
µA
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
- 50
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 175 °C
- 150
On-State Drain Current
b
I
D(on)
V
DS
= - 5 V, V
GS
= - 10 V
- 10 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= - 10 V, I
D
= - 5 A
0.125 0.155
Ω
V
GS
= - 10 V, I
D
= - 5 A, T
J
= 125 °C
0.280
V
GS
= - 10 V, I
D
= - 5 A, T
J
= 175 °C
0.350
V
GS
= - 4.5 V, I
D
= - 2 A
0.158 0.280
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 5 A
8S
Dynamic
Input Capacitance
C
iss
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
450
pFOutput Capacitance
C
oss
65
Reverse Transfer Capacitance
C
rss
40
Total Gate Charge
Q
g
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 8.4 A
12.5 19
nC
Gate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
3.2
Gate Resistance
R
g
f = 1 MHz 8.0 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= - 30 V, R
L
= 3.57 Ω
I
D
≅ - 8.4 A, V
GEN
= - 10 V, R
G
= 2.5 Ω
510
ns
Rise Time
c
t
r
14 25
Turn-Off Delay Time
c
t
d(off)
15 25
Fall Time
c
t
f
712
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Pulsed Current
I
SM
- 20 A
Forward Voltage
b
V
SD
I
F
= - 2 A, V
GS
= 0 V
- 0.9 - 1.3 V
Reverse Recovery Time
t
rr
I
F
= - 8 A, di/dt = 100 A/µs
50 80 ns
Reverse Recovery Time
Q
rr
80 120 nC
