DMN2300U-7 Datasheet DMN2300U-7 | P1-P3

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

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DMN2300U

20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

Product Summary

V

(BR)DSS

R

DS(on)

I

D

Max (Note 5)

20V

175mΩ @ V

GS

= 4.5V 1.40A @ T

A

= 25°C

240mΩ @ V

GS

= 2.5V 1.20A @ T

A

= 25°C

360mΩ @ V

GS

= 1.8V 1.0A @ T

A

= 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Load switch

Features and Benefits

• On resistance <200mΩ

• Low Gate Threshold Voltage

• Fast Switching Speed

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2kV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin

• Weight: 0.08 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2300U-7 N2U 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N2U = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

SOT23

Top View Top View

Equivalent Circuit

D

G

S

ESD PROTECTED TO 2kV

Source

Gate

Drain

Body

Diode

Gate

Protection

Diode

N2U

YM

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

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DMN2300U

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current

Steady

State

T

A

= 25°C (Note 5)

T

A

= 85°C (Note 5)

T

A

= 25°C (Note 4)

I

D

1.40

1.01

1.24

A

Pulsed Drain Current (Note 6)

I

DM

11 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation

(Note 4)

P

D

0.43 W

(Note 5) 0.55 W

Thermal Resistance, Junction to Ambient

(Note 4)

R

θJA

288 °C/W

(Note 5) 228 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

Thermal Characteristics

0

10

20

30

40

50

60

70

80

90

100

0.00001 0.001 0.1 10 1000

Single Pulse

Rthja = 220C/W

Rthja(t) = Rthja*r(t)

T - T = P*Rthja (t)

JA

P(pk), PEAK TRANSIENT POWER (W)

T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

100

0.01 0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE

Fig. 2 SOA, Safe Operation Area

DS

I (A) @

P = 10s

D

W

I (A) @ DC

D

I (A) @

P = 1s

D

W

I (A) @

P = 100ms

D

W

I (A) @

P = 10ms

D

W

I (A) @

P = 1ms

D

W

I (A) @

P = 100µs

D

W

I (A) @

P = 10µs

D

W

T = 150°C

T = 25°C

Single Pulse

J(MAX)

A

0.001

0.01

0.1

1

10

I, D

R

AIN

C

U

R

EN

T

(A)

D

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

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DMN2300U

0.001

0.01

0.1

1

R(t), TRANSIENT THERMAL RESISITANCE

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resistance

R (t) = r(t)*R

R = 220C/W

Duty Cycle, D = t1/t2

θθ

θ

JA JA

JA

r(t) @ D=Single Pulse

r(t) @ D=0.005

r(t) @ D=0.01

r(t) @ D=0.05

r(t) @ D=0.1

r(t) @ D=0.3

r(t) @ D=0.5

r(t) @ D=0.7

r(t) @ D=0.9

r(t) @ D=0.01

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 10μA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- - 1

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - 10

μA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS

(

th

)

0.45 - 0.95 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

175

mΩ

V

GS

= 4.5V, I

D

= 300mA

240

V

GS

= 2.5V, I

D

= 250mA

360

V

GS

= 1.8V, I

D

= 100mA

Forward Transfer Admittance

|Y

fs

|

40 - - mS

V

DS

= 3V, I

D

= 30mA

Diode Forward Voltage

V

SD

- 0.7 1.2 V

V

GS

= 0V, I

S

= 300mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

C

iss

- 64.3 -

pF

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 6.1 -

pF

Reverse Transfer Capacitance

C

rss

- 4.5 -

pF

Gate Resistance

R

g

- 70 -

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

- 1.6 -

nC

V

GS

= 4.5V, V

DS

= 15V,

I

D

= 1A

Gate-Source Charge

Q

g

s

- 0.2 -

nC

Gate-Drain Charge

Q

g

d

- 0.2 -

nC

Turn-On Delay Time

t

D

(

on

)

- 3.5 -

ns

V

DS

= 10V, I

D

= 1A

V

GS

= 10V, R

G

= 6Ω

Turn-On Rise Time

t

r

- 2.8 -

ns

Turn-Off Delay Time

t

D

(

off

)

- 38 -

ns

Turn-Off Fall Time

t

f

- 13 -

ns

Notes: 7. Short duration pulse test used to minimize self-heating effect.

DMN2300U-7

DMN2300U-7

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