VS-GB50TP120N

VS-GB50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
1
Document Number: 94820
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
High short circuit capability, self limiting to 6 x I
C
10 μs short circuit capability
•V
CE(on)
with positive temperature coefficient
Maximum junction temperature 150 °C
Low inductance case
Fast and soft reverse recovery antiparallel FWD
Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
AC inverter drives
Switching mode power supplies
Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C 50 A
V
CE(on)
(typical)
at I
C
= 50 A, 25 °C
1.75 V
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit Half bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200
V
Gate to emitter voltage V
GES
± 20
Collector current I
C
T
C
= 25 °C 100
A
T
C
= 80 °C 50
Pulsed collector current I
CM
(1)
t
p
= 1 ms 100
Diode continuous forward current I
F
50
Diode maximum forward current I
FM
100
Maximum power dissipation P
D
T
J
= 150 °C 446 W
Short circuit withstand time t
SC
T
J
= 125 °C 10 μs
RMS isolation voltage V
ISOL
f = 50 Hz, t = 1 min 2500 V
I
2
t-value, diode I
2
tV
R
= 0 V, t = 10 ms, T
J
= 125 °C 420 A
2
s
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1.0 mA, T
J
= 25 °C 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C - 1.75 2.15
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.0 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 2.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
VS-GB50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
2
Document Number: 94820
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 15 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 382 -
ns
Rise time t
r
-74-
Turn-off delay time t
d(off)
- 379 -
Fall time t
f
- 380 -
Turn-on switching loss E
on
-6.28-
mJ
Turn-off switching loss E
off
-3.23-
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 15 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 403 -
ns
Rise time t
r
-72-
Turn-off delay time t
d(off)
- 404 -
Fall time t
f
- 381 -
Turn-on switching loss E
on
-7.30-
mJ
Turn-off switching loss E
off
-5.22-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz,
T
J
= 25 °C
-4.29-
nFOutput capacitance C
oes
-0.30-
Reverse transfer capacitance C
res
-0.20-
SC data I
SC
t
sc
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
1200 V
- 270 - A
Internal gate resistance R
gint
-10-
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
-0.75- m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 50 A
T
J
= 25 °C - 2.05 2.45
V
T
J
= 125 °C - 2.10 -
Diode reverse recovery charge Q
rr
I
F
= 50 A, V
R
= 600 V,
dI
F
/dt = -830 A/μs,
V
GE
= -15 V
T
J
= 25 °C - 3.32 -
μC
T
J
= 125 °C - 6.51 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 33.8 -
A
T
J
= 125 °C - 46.9 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 1.28 -
mJ
T
J
= 125 °C - 2.03 -
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 150
°C
Storage temperature range T
STG
-40 - 125
Junction to case
IGBT (per 1/2 module)
R
thJC
- - 0.28
K/WDiode (per 1/2 module) - - 0.49
Case to sink R
thCS
Conductive grease applied - 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight of module 150 g
VS-GB50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
3
Document Number: 94820
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. R
g
Fig. 5 - RBSOA
100
90
80
70
60
50
40
30
20
10
0
0 0.5 1.51 2 2.5 3
V
CE
(V)
I
C
(A)
V
GE
= 15 V
25 °C
125 °C
100
90
80
70
60
50
40
30
20
10
0
67 98101112
V
GE
(V)
I
C
(A)
V
CE
= 20 V
25 °C
125 °C
0
5
10
15
20
25
020406080100
I
C
(A)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 15 Ω
V
CC
= 600 V
E
on
E
off
0
5
10
15
20
25
020406080100
R
g
(Ω)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 600 V
E
on
E
off
V
CE
(V)
I
C
(A)
0
15
30
45
60
75
90
105
120
0 250 750500 12501000 1500
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 15 Ω
I
C
, Module

VS-GB50TP120N

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules Output & SW Modules - IAP IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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