2N7002W-TP

2N7002W
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
Features
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: K72
Maximum Ratings
Operating Temperature: -55°Cto+150°C
Storage Temperature: -55°Cto+150°C
Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter Symbol Value Unit
Drain-Source-Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60 V
Gate-Source-Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100
Pulsed
I
D
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above T
A
=25
P
D
200
1.60
mW
mW/
Note: 1. Valid provided that terminals are kept at specified ambient
temperature.
2. Pulse width 300µs, duty cycle 2%
r
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .012 .016 .30 .40
A
C
B
D
E
F
G
H
J
1.90
0
.7
0
0.90
0
.
65
0.65
DIMENSIONS
S
G
D
K
omponents
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MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
Suggested Solder
Pad Layout
Low ON-Resistance
Low Input Capacitance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Mechanical Data
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Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
60 70 V
V
GS
= 0V, I
D
= 10 A
Zero Gate Voltage Drain Current @ T
C
= 25°C
@ T
C
= 125°C
I
DSS
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
1.0 2.0 V
V
DS
=V
GS
, I
D
=-250 A
On-State Drain Current
I
D(ON)
0.5 1.0 A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80 mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
22 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11 25 pF
Reverse Transfer Capacitance
C
rss
2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 , V
GEN
= 10V,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
11 20 ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width 300s, duty cycle 2%.
Static Drain-Source On-Resistance @ T
j
= 25°C
@T
j
= 125°C
R
DS (ON)
3.2
4.4
7.5
13.5
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
2N7002W
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
0
0.2
0.4
0.6
0.8
1
.
0
01 2
3
4
5
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 1 On-Re
g
ion Characteristics
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
GS
5.5V
5.0V
0
1
2
3
4
5
0 0.2
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
D
V = 5.0V
GS
T = 25 C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45
70
95 120 145
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs Junction Temperature
j
V = 10V, I
GS D
= 0.5A
V = 5.0V, I
GS D
= 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 1012141618
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
2N7002W
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 4

2N7002W-TP

Mfr. #:
Manufacturer:
Micro Commercial Components (MCC)
Description:
MOSFET SNGL N-CH 60V 115mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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