TSM1NB60CH C5G Datasheet TSM1NB60CP ROG, TSM1NB60CW RPG, TSM1NB60CH C5G | P1-P3

TSM1NB60

Taiwan Semiconductor

Document Number: DS_P0000038 1 Version: D1706

N-Channel Power MOSFET

600V, 1A, 10Ω

FEATURES

● Advanced planar process

● 100% avalanche tested

● Low R

DS(ON)

8Ω (Typ.)

● Low gate charge typical @ 6.1 nC (Typ.)

● Low Crss typical @4.2pF (Typ.)

APPLICATION

● Power Supply

● Lighting

● Charger

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

600

V

R

DS(on)

(max)

10

Ω

Q

g

6.1

nC

SOT-223

TO-251 (IPAK)

TO-252 (DPAK)

Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK), SOT-223 per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

IPAK/DPAK

SOT-223

UNIT

Drain-Source Voltage

V

DS

600

V

Gate-Source Voltage

V

GS

±30

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

1

A

T

C

= 100°C

0.7

Pulsed Drain Current

(Note 2)

I

DM

4

A

Total Power Dissipation @ T

C

= 25°C

P

DTOT

39

2.1

W

Single Pulsed Avalanche Energy

(Note 3)

E

AS

5

mJ

Single Pulsed Avalanche Current

(Note 3)

I

AS

1

A

Peak Diode Recovery dv/dt

(Note 4)

dv/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

IPAK/DPAK

SOT-223

UNIT

Junction to Case Thermal Resistance

R

ӨJC

2.87

--

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

110

60

°C/W

Notes: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is determined by the user’s board

design. R

ӨJA

shown below for single device operation on FR-4 PCB in still air.

TSM1NB60

Taiwan Semiconductor

Document Number: DS_P0000038 2 Version: D1706

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 5)

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

600

--

V

Drain-Source On-State Resistance

V

GS

= 10V, I

D

= 0.5A

R

DS(ON)

--

8

10

Ω

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

2.5

3.5

4.5

V

Zero Gate Voltage Drain Current

V

DS

= 600V, V

GS

= 0V

I

DSS

--

10

µA

Gate Body Leakage

V

GS

= ±30V, V

DS

= 0V

I

GSS

--

±100

nA

Forward Transfer Conductance

V

DS

= 10V, I

D

= 0.5A

g

fs

--

0.8

--

S

Dynamic

(Note 6)

Total Gate Charge

V

DS

= 480V, I

D

= 1A,

V

GS

= 10V

Q

g

--

6.1

--

nC

Gate-Source Charge

Q

gs

--

1.4

--

Gate-Drain Charge

Q

gd

--

3.3

--

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

138

--

pF

Output Capacitance

C

oss

--

17.1

--

Reverse Transfer Capacitance

C

rss

--

4.2

--

Gate Resistance

F = 1MHz, open drain

R

g

--

12.5

--

Ω

Switching

(Note 7)

Turn-On Delay Time

V

DD

= 300V, R

G

=25Ω

I

D

= 1A, V

GS

= 10V

t

d(on)

--

7.7

--

ns

Turn-On Rise Time

t

r

--

6.8

--

Turn-Off Delay Time

t

d(off)

--

15.3

--

Turn-Off Fall Time

t

f

--

14.9

--

Source-Drain Diode

(Note 5)

Diode Forward Voltage

I

S

= 1A, V

GS

= 0V

V

SD

--

0.9

1.4

V

Source Current

Integral reverse diode

In the MOSFET

I

S

--

1

A

Source Current (Pulse)

I

SM

--

4

Notes:

1. Current limited by package.

2. Pulse width limited by the maximum junction temperature.

3. L = 10mH, I

AS

= 1A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C.

4. I

SD

≤1A , V

DD

≤BV

DSS

, di/dt≤200A/us , Starting T

J

= 25

o

C.

5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.

6. For DESIGN AID ONLY, not subject to production testing.

7. Switching time is essentially independent of operating temperature.

TSM1NB60

Taiwan Semiconductor

Document Number: DS_P0000038 3 Version: D1706

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM1NB60CH C5G

TO-251

75 pcs / Tube

TSM1NB60CP ROG

TO-252

2,500 pcs / 13” Reel

TSM1NB60CW RPG

SOT-223

2,500 pcs / 13” Reel

Note:

1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

2. Halogen-free according to IEC 61249-2-21 definition

TSM1NB60CH C5G

TSM1NB60CH C5G

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