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IXEH25N120D1

P1-P3P4-P4
4 - 4© 2005 IXYS All rights reserved
IXEH 25N120
IXEH 25N120D1
0549
0 10203040
0
4
8
12
16
20
0
50
100
150
200
250
0 10203040
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
350
400
1 10 100 1000 10000
0.1
1
10
0 50 100 150 200 250
0.0
0.5
1.0
1.5
2.0
2.5
0
250
500
750
1000
1250
0 50 100 150 200 250
0
2
4
6
8
10
0 200 400 600 800 1000 1200
0
20
40
60
80
E
off
t
d(off)
t
f
E
on
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
ms
mJ
E
on
mJ
E
off
ns
t
I
CM
K/W
Z
thJC
V
A
mJ ns
t
d(on)
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 20 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 68 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 68 Ω
T
VJ
= 125°C
R
G
= 68 Ω
T
VJ
= 125°C
mJ
ns
single pulse
IGBT
diode
IXEH 25N120
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy vs gate resistor Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
P1-P3P4-P4

IXEH25N120D1

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Description:
IGBT 1200V 36A 200W TO247AD
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