Schottky Barrier Rectifiers
www.Microsemi.com
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Copyright © 2010
June 2010 Rev B
MBR3040CT to MBR30200CT
Main product characteristics
Features and benefits
• Plastic package with UL 94V-0 flammability classification
• Flame retardant epoxy molding component
• Guardring for overvoltage protection
• Low power loss, high efficiency
• RoHS compliant (2002/95/EC)
Description and applications
Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and
polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction
leading to low power loss and high efficiency.
Electrical characteristics
(1)
Symbol Parameter
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
MBR3080CT
MBR3090CT
MBR30100CT
MBR30150CT
MBR30200CT
Unit
V
RRM
Max Peak Repetitive Reverse Voltage 40 45 50 60 80 90 100 150 200 V
V
R(RMS)
Max RMS Reverse Voltage 28 31.5 35 42 56 63 70 105 140 V
V
R
Max DC Blocking Voltage 40 45 50 60 80 90 100 150 200 V
I
F(AV)
Max average forward current (see fig.1) 30 A
I
FSM
Non repetitive peak forward surge current
(8.3ms single half sine wave)
275 A
V
F
Max forward voltage @ 15A (per leg) 0.70 0.75 0.80 0.90 V
Maximum instantaneous T
J
= 25ºC 0.05
I
R
(2)
reverse current at rated V
R
T
J
= 125ºC 20
mA
T
STG,
T
J
Storage and Junction temperature
-55 to +150
-65 to +175 ºC
(1)
All ratings at 25ºC unless specified otherwise
(2)
Measured with a test pulse of 380µs to minimize self-heating effect
I
F(AV)
30A (2 x 15A)
V
RRM
40V to 200V
T
j(MAX)
175ºC
TO-220AB
RoHS
1
2
2
3
2
3
1
