Features
■ 10 kA, 8/20 µs surge capability
■ Low clamping voltage under surge
■ Bidirectional TVS
■ Excellent performance over temperature
Applications
■ High power DC bus protection
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
PTVS10-xxxC-TH Series High Current TVS Diodes
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
General Information
The Model PTVS10-xxxC-TH Series high current bidirectional TVS diodes are designed
for use in high power DC bus clamping applications. These devices offer bidirectional
port protection and are available with standoff voltage ratings of 58 V and 76 V.
The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current
surge requirements.
*RoHS COMPLIANT
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Test Conditions Min. Typ. Max. Unit
I
D
Standby Current V
D
= V
WM
10 µA
V
(BR)
Breakdown Voltage I
BR
= 10 mA
PTVS10-058C-TH
PTVS10-076C-TH
64
85
66
92
70
95
V
V
C
Clamping Voltage
(1)
per IEC61000-4-5
(8/20 µs current waveform)
I
PP
= 10 kA
PTVS10-058C-TH
PTVS10-076C-TH
110
140
V
V
(BR)
Temperature Coeffi cient 0.1 %/°C
C Capacitance
F = 10 kHz,
V
d
= 1 Vrms
PTVS10-058C-TH
PTVS10-076C-TH
7.5
5.6
nF
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(1)
V
C
measured at the time which is coincident with the peak surge current.
Rating Symbol Value Unit
Repetitive Standoff Voltage
PTVS10-058C-TH
PTVS10-076C-TH
V
WM
58
76
V
Peak Current Rating per 8/20 µs IEC 61000-4-5 I
PPM
10 kA
Operating Junction Temperature Range T
J
-55 to +125 °C
Storage Temperature Range T
S
-55 to +150 °C
Lead Temperature, Soldering (10 s) 260 °C